Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Jae Hoon Jung, Byeong Kwon Ju, Hoon Kim, Myung Hwan Oh, Suk Jae Chung, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages276-280
Number of pages5
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

Fingerprint

electron emission
diamonds
carbon
coatings
molybdenum
field emission
emitters
pixels
vapor deposition
augmentation
silicon
hydrogen

ASJC Scopus subject areas

  • Surfaces and Interfaces

Cite this

Jung, J. H., Ju, B. K., Kim, H., Oh, M. H., Chung, S. J., & Jang, J. (1997). Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 276-280). Piscataway, NJ, United States: IEEE.

Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. / Jung, Jae Hoon; Ju, Byeong Kwon; Kim, Hoon; Oh, Myung Hwan; Chung, Suk Jae; Jang, Jin.

Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. ed. / Anon. Piscataway, NJ, United States : IEEE, 1997. p. 276-280.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jung, JH, Ju, BK, Kim, H, Oh, MH, Chung, SJ & Jang, J 1997, Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. in Anon (ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, Piscataway, NJ, United States, pp. 276-280, Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97, Kyongju, Korea, 97/8/17.
Jung JH, Ju BK, Kim H, Oh MH, Chung SJ, Jang J. Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. In Anon, editor, Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. Piscataway, NJ, United States: IEEE. 1997. p. 276-280
Jung, Jae Hoon ; Ju, Byeong Kwon ; Kim, Hoon ; Oh, Myung Hwan ; Chung, Suk Jae ; Jang, Jin. / Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. editor / Anon. Piscataway, NJ, United States : IEEE, 1997. pp. 276-280
@inproceedings{9fa281d68d1b468fae2702e6c94eeb7b,
title = "Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel",
abstract = "We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.",
author = "Jung, {Jae Hoon} and Ju, {Byeong Kwon} and Hoon Kim and Oh, {Myung Hwan} and Chung, {Suk Jae} and Jin Jang",
year = "1997",
month = "12",
day = "1",
language = "English",
pages = "276--280",
editor = "Anon",
booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",
publisher = "IEEE",

}

TY - GEN

T1 - Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

AU - Jung, Jae Hoon

AU - Ju, Byeong Kwon

AU - Kim, Hoon

AU - Oh, Myung Hwan

AU - Chung, Suk Jae

AU - Jang, Jin

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

AB - We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

UR - http://www.scopus.com/inward/record.url?scp=0031339347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031339347&partnerID=8YFLogxK

M3 - Conference contribution

SP - 276

EP - 280

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

A2 - Anon, null

PB - IEEE

CY - Piscataway, NJ, United States

ER -