Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel

Jae Hoon Jung, Byeong Kwon Ju, Hoon Kim, Myung Hwan Oh, Suk Jae Chung, Jin Jang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We have studied on the enhancement of field emission characteristics by hydrogen-free N-doped diamond-like carbon (DLC) coating on Mo-tip field emitter arrays by a layer-by-layer technique using plasma enhanced chemical vapor deposition. The Spindt-type Molybdenum tip is used as a emission source without resistive layer on silicon substrate. The maximum emission current for each pixel was increased from 160 μA to 1520 μA by 20 nm N-doped DLC coating Furthermore, the emission current from DLC coated FEAs is more stable than that of non-coated FEAs.

Original languageEnglish
Title of host publicationProceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Editors Anon
Place of PublicationPiscataway, NJ, United States
PublisherIEEE
Pages276-280
Number of pages5
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 1997 Aug 171997 Aug 21

Other

OtherProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period97/8/1797/8/21

ASJC Scopus subject areas

  • Surfaces and Interfaces

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  • Cite this

    Jung, J. H., Ju, B. K., Kim, H., Oh, M. H., Chung, S. J., & Jang, J. (1997). Effect of N doping on the electron emission properties of DLC film on 2-inch Mo FEAs panel. In Anon (Ed.), Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC (pp. 276-280). IEEE.