Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

In Hwan Lee, Han Su Cho, K. B. Bae, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, J. H. Baek, Tae Hoon Chung, I. V. Shchemerov, E. S. Kondratyev, S. J. Pearton

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12 Citations (Scopus)


The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

Original languageEnglish
Article number045108
JournalJournal of Applied Physics
Issue number4
Publication statusPublished - 2017 Jan 28
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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