Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

In Hwan Lee; Han Su Cho; K. B. Bae; A. Y. Polyakov; N. B. Smirnov; R. A. Zinovyev; J. H. Baek; Tae Hoon Chung; I. V. Shchemerov; E. S. Kondratyev; S. J. Pearton

doi:10.1063/1.4974971

Effect of nanopillar sublayer embedded with SiO₂ on deep traps in green GaN/InGaN light emitting diodes

In Hwan Lee, Han Su Cho, K. B. Bae, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, J. H. Baek, Tae Hoon Chung, I. V. Shchemerov, E. S. Kondratyev, S. J. Pearton

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12 Citations (Scopus)

Abstract

The effect of a layer of GaN nanopillars with SiO₂ nanoparticles inserted into the n⁺-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO₂ LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO₂ LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

Original language	English
Article number	045108
Journal	Journal of Applied Physics
Volume	121
Issue number	4
DOIs	https://doi.org/10.1063/1.4974971
Publication status	Published - 2017 Jan 28
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{812f6c6d57a645d09e845e4ce2e64d76,

title = "Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes",

abstract = "The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.",

author = "Lee, {In Hwan} and Cho, {Han Su} and Bae, {K. B.} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Zinovyev, {R. A.} and Baek, {J. H.} and Chung, {Tae Hoon} and Shchemerov, {I. V.} and Kondratyev, {E. S.} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (К2-2014-055). The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2015042417). The work at UF was supported by DTRA 17-1-011. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = jan,

day = "28",

doi = "10.1063/1.4974971",

language = "English",

volume = "121",

journal = "Journal of Applied Physics",

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T1 - Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

AU - Lee, In Hwan

AU - Cho, Han Su

AU - Bae, K. B.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Zinovyev, R. A.

AU - Baek, J. H.

AU - Chung, Tae Hoon

AU - Shchemerov, I. V.

AU - Kondratyev, E. S.

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST “MISiS” (К2-2014-055). The work at Chonbuk National University was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2015042417). The work at UF was supported by DTRA 17-1-011. Publisher Copyright: © 2017 Author(s).

PY - 2017/1/28

Y1 - 2017/1/28

N2 - The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

AB - The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

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DO - 10.1063/1.4974971

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AN - SCOPUS:85010773915

SN - 0021-8979

VL - 121

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 045108

ER -

Effect of nanopillar sublayer embedded with SiO₂ on deep traps in green GaN/InGaN light emitting diodes

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