Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes

In-Hwan Lee, Han Su Cho, K. B. Bae, A. Y. Polyakov, N. B. Smirnov, R. A. Zinovyev, J. H. Baek, Tae Hoon Chung, I. V. Shchemerov, E. S. Kondratyev, S. J. Pearton

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effect of a layer of GaN nanopillars with SiO2 nanoparticles inserted into the n+-GaN contact Layer on the electrical properties, electroluminescence (EL) and photoluminescence (PL), admittance spectra, and deep trap spectra of green multi-quantum-well GaN/InGaN light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on patterned sapphire substrates is reported. The PL and EL intensities for these SiO2 LEDs are measurably enhanced compared with reference to LEDs without the nanopillar sublayer. This correlates with the decrease in the SiO2 LEDs of the concentration of 0.25 eV electron traps and 0.45 eV hole traps, both located in the InGaN QWs.

Original languageEnglish
Article number045108
JournalJournal of Applied Physics
Volume121
Issue number4
DOIs
Publication statusPublished - 2017 Jan 28
Externally publishedYes

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light emitting diodes
traps
electroluminescence
photoluminescence
electrical impedance
metalorganic chemical vapor deposition
sapphire
electrical properties
quantum wells
nanoparticles
electrons

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Lee, I-H., Cho, H. S., Bae, K. B., Polyakov, A. Y., Smirnov, N. B., Zinovyev, R. A., ... Pearton, S. J. (2017). Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes. Journal of Applied Physics, 121(4), [045108]. https://doi.org/10.1063/1.4974971

Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes. / Lee, In-Hwan; Cho, Han Su; Bae, K. B.; Polyakov, A. Y.; Smirnov, N. B.; Zinovyev, R. A.; Baek, J. H.; Chung, Tae Hoon; Shchemerov, I. V.; Kondratyev, E. S.; Pearton, S. J.

In: Journal of Applied Physics, Vol. 121, No. 4, 045108, 28.01.2017.

Research output: Contribution to journalArticle

Lee, I-H, Cho, HS, Bae, KB, Polyakov, AY, Smirnov, NB, Zinovyev, RA, Baek, JH, Chung, TH, Shchemerov, IV, Kondratyev, ES & Pearton, SJ 2017, 'Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes', Journal of Applied Physics, vol. 121, no. 4, 045108. https://doi.org/10.1063/1.4974971
Lee, In-Hwan ; Cho, Han Su ; Bae, K. B. ; Polyakov, A. Y. ; Smirnov, N. B. ; Zinovyev, R. A. ; Baek, J. H. ; Chung, Tae Hoon ; Shchemerov, I. V. ; Kondratyev, E. S. ; Pearton, S. J. / Effect of nanopillar sublayer embedded with SiO2 on deep traps in green GaN/InGaN light emitting diodes. In: Journal of Applied Physics. 2017 ; Vol. 121, No. 4.
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AU - Smirnov, N. B.

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