Effect of nanopyramid bottom electrodes on bipolar resistive switching phenomena in nickel nitride films-based crossbar arrays

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Tae Geun Kim

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25 Citations (Scopus)


The improved resistive switching (RS) performance characteristics of nickel nitride (NiN) films-based crossbar array (CBA) memory resistors - such as reduction in the operating voltages, reset current and current/voltage variations; no initial forming process; and set/reset speeds - are demonstrated using nanopyramid-patterned (NPP) platinum-bottom electrodes. Compared with a conventional CBA sample with flat-bottom electrodes, both the voltage and the current of the set and reset operations are respectively reduced when NPP samples are used. The drastic reduction in the variation of the operating voltage and current is of particular interest. We explain the RS process using the model of the redox-reaction-mediated formation and rupture of the conducting filaments in the NiN films, based on the capacitance-voltage and conductance-voltage characteristics under different resistance states.

Original languageEnglish
Article number125201
Issue number12
Publication statusPublished - 2014 Mar 28



  • crossbar array
  • nanopyramid electrode
  • NiN film

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

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