Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Hong Yeol Kim, Ji Hyun Kim, F. Ren, Soohwan Jang

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

Original languageEnglish
Pages (from-to)27-29
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume28
Issue number1
DOIs
Publication statusPublished - 2010 Mar 19

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Neutron irradiation
neutron irradiation
Light emitting diodes
Neutrons
Electric properties
light emitting diodes
Optical properties
electrical properties
optical properties
neutrons
Irradiation
irradiation
room temperature
light emission
Diodes
diodes
Annealing
damage
Wavelength
dosage

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes. / Kim, Hong Yeol; Kim, Ji Hyun; Ren, F.; Jang, Soohwan.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 28, No. 1, 19.03.2010, p. 27-29.

Research output: Contribution to journalArticle

@article{97ef1cf3b0e64b36b5c0896e74f5130d,
title = "Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes",
abstract = "InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.",
author = "Kim, {Hong Yeol} and Kim, {Ji Hyun} and F. Ren and Soohwan Jang",
year = "2010",
month = "3",
day = "19",
doi = "10.1116/1.3268136",
language = "English",
volume = "28",
pages = "27--29",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

AU - Kim, Hong Yeol

AU - Kim, Ji Hyun

AU - Ren, F.

AU - Jang, Soohwan

PY - 2010/3/19

Y1 - 2010/3/19

N2 - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

AB - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

UR - http://www.scopus.com/inward/record.url?scp=77949414645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77949414645&partnerID=8YFLogxK

U2 - 10.1116/1.3268136

DO - 10.1116/1.3268136

M3 - Article

VL - 28

SP - 27

EP - 29

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 1

ER -