Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Hong Yeol Kim, Jihyun Kim, F. Ren, Soohwan Jang

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

Original languageEnglish
Pages (from-to)27-29
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume28
Issue number1
DOIs
Publication statusPublished - 2010

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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