Abstract
InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2010 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Cite this
Kim, H. Y., Kim, J., Ren, F., & Jang, S. (2010). Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 28(1), 27-29. https://doi.org/10.1116/1.3268136