Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Hong Yeol Kim; Jihyun Kim; F. Ren; Soohwan Jang

doi:10.1116/1.3268136

Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Hong Yeol Kim, Jihyun Kim, F. Ren, Soohwan Jang

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

Original language	English
Pages (from-to)	27-29
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	28
Issue number	1
DOIs	https://doi.org/10.1116/1.3268136
Publication status	Published - 2010

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.",

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AU - Kim, Jihyun

AU - Ren, F.

AU - Jang, Soohwan

PY - 2010

Y1 - 2010

N2 - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

AB - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.

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Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes

Abstract

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