Abstract
InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 27-29 |
| Number of pages | 3 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 28 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2010 Mar 19 |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes. / Kim, Hong Yeol; Kim, Ji Hyun; Ren, F.; Jang, Soohwan.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 28, No. 1, 19.03.2010, p. 27-29.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of neutron irradiation on electrical and optical properties of InGaN/GaN light-emitting diodes
AU - Kim, Hong Yeol
AU - Kim, Ji Hyun
AU - Ren, F.
AU - Jang, Soohwan
PY - 2010/3/19
Y1 - 2010/3/19
N2 - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
AB - InGaN/GaN multiquantum well light-emitting diodes (LED) with emission wavelength of 450 nm were irradiated with average energy of 9.8 MeV and dose of 5.5× 1011 cm-2 neutrons. Right after irradiation, the forward current of the irradiated LEDs was decreased as a result of the creation of deep levels by the neutron-induced lattice displacement. However, unstable lattice damages resulting from the collisions with the incoming neutrons were removed at room temperature 6 days after the irradiation. The diode turn-on voltage, ideality factor, and optical emission intensity were recovered to preirradiated state by self-annealing process at room temperature.
UR - http://www.scopus.com/inward/record.url?scp=77949414645&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949414645&partnerID=8YFLogxK
U2 - 10.1116/1.3268136
DO - 10.1116/1.3268136
M3 - Article
VL - 28
SP - 27
EP - 29
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 1
ER -