Effect of new materials as under and cap layers on thermal stability of synthetic bottom spin valves

Eun Kyung Hyun, Seong Rae Lee

Research output: Contribution to journalArticle

Abstract

We investigated the thermal stability of the Ta-, ZrAl- and TiAl-based synthetic bottom spin valves. In the as-deposited state, the MR ratios of ZrAl- and TiAl-based synthetic SVs (SSV) are similar to that of the Ta-based SV. However, after annealed at 400 °C for 10 min, the MR ratio of Ta-based SV decreased by 42.5% (from 7.43% to 4.27%). On the other hand, the MR ratio of ZrAl- and TiAl-based SSVs increased 0.3% (from 7.37% to 7.39%) and 13.3% (from 7.47% to 8.46%), respectively. Auger depth profile clearly showed that ZrAl- and TiAl-based SSVs have higher interdiffusion resistance than Ta-based SV. Especially, diffusion of Mn from antiferromagnet layer to pinned layer was suppressed in TiAl-based SVs. The root-mean-square (RMS) roughness of the TiAl layer (0.11 nm) was much smaller than those of the ZrAl (0.16 nm) and Ta layer (0.43 nm). Due to high affinity of Ti or Al with oxygen, very stable and dense TiAl-oxides were formed at the surface during annealing. Thermal stability of TiAl- and ZrAl-based SSVs was enhanced due to surface uniformity and high passivity of TiAl- and ZrAl-oxides.

Original languageEnglish
Pages (from-to)1908-1910
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume310
Issue number2 SUPPL. PART 3
DOIs
Publication statusPublished - 2007 Mar 1

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caps
Oxides
Thermodynamic stability
thermal stability
Surface roughness
Annealing
Oxygen
oxides
high resistance
passivity
affinity
roughness
annealing
oxygen
profiles

Keywords

  • Interdiffusion
  • Synthetic spin valve
  • Thermal stability
  • TiAl
  • ZrAl

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of new materials as under and cap layers on thermal stability of synthetic bottom spin valves. / Hyun, Eun Kyung; Lee, Seong Rae.

In: Journal of Magnetism and Magnetic Materials, Vol. 310, No. 2 SUPPL. PART 3, 01.03.2007, p. 1908-1910.

Research output: Contribution to journalArticle

@article{c0c1492dedc349b29ba13c349179c07c,
title = "Effect of new materials as under and cap layers on thermal stability of synthetic bottom spin valves",
abstract = "We investigated the thermal stability of the Ta-, ZrAl- and TiAl-based synthetic bottom spin valves. In the as-deposited state, the MR ratios of ZrAl- and TiAl-based synthetic SVs (SSV) are similar to that of the Ta-based SV. However, after annealed at 400 °C for 10 min, the MR ratio of Ta-based SV decreased by 42.5{\%} (from 7.43{\%} to 4.27{\%}). On the other hand, the MR ratio of ZrAl- and TiAl-based SSVs increased 0.3{\%} (from 7.37{\%} to 7.39{\%}) and 13.3{\%} (from 7.47{\%} to 8.46{\%}), respectively. Auger depth profile clearly showed that ZrAl- and TiAl-based SSVs have higher interdiffusion resistance than Ta-based SV. Especially, diffusion of Mn from antiferromagnet layer to pinned layer was suppressed in TiAl-based SVs. The root-mean-square (RMS) roughness of the TiAl layer (0.11 nm) was much smaller than those of the ZrAl (0.16 nm) and Ta layer (0.43 nm). Due to high affinity of Ti or Al with oxygen, very stable and dense TiAl-oxides were formed at the surface during annealing. Thermal stability of TiAl- and ZrAl-based SSVs was enhanced due to surface uniformity and high passivity of TiAl- and ZrAl-oxides.",
keywords = "Interdiffusion, Synthetic spin valve, Thermal stability, TiAl, ZrAl",
author = "Hyun, {Eun Kyung} and Lee, {Seong Rae}",
year = "2007",
month = "3",
day = "1",
doi = "10.1016/j.jmmm.2006.10.592",
language = "English",
volume = "310",
pages = "1908--1910",
journal = "Journal of Magnetism and Magnetic Materials",
issn = "0304-8853",
publisher = "Elsevier",
number = "2 SUPPL. PART 3",

}

TY - JOUR

T1 - Effect of new materials as under and cap layers on thermal stability of synthetic bottom spin valves

AU - Hyun, Eun Kyung

AU - Lee, Seong Rae

PY - 2007/3/1

Y1 - 2007/3/1

N2 - We investigated the thermal stability of the Ta-, ZrAl- and TiAl-based synthetic bottom spin valves. In the as-deposited state, the MR ratios of ZrAl- and TiAl-based synthetic SVs (SSV) are similar to that of the Ta-based SV. However, after annealed at 400 °C for 10 min, the MR ratio of Ta-based SV decreased by 42.5% (from 7.43% to 4.27%). On the other hand, the MR ratio of ZrAl- and TiAl-based SSVs increased 0.3% (from 7.37% to 7.39%) and 13.3% (from 7.47% to 8.46%), respectively. Auger depth profile clearly showed that ZrAl- and TiAl-based SSVs have higher interdiffusion resistance than Ta-based SV. Especially, diffusion of Mn from antiferromagnet layer to pinned layer was suppressed in TiAl-based SVs. The root-mean-square (RMS) roughness of the TiAl layer (0.11 nm) was much smaller than those of the ZrAl (0.16 nm) and Ta layer (0.43 nm). Due to high affinity of Ti or Al with oxygen, very stable and dense TiAl-oxides were formed at the surface during annealing. Thermal stability of TiAl- and ZrAl-based SSVs was enhanced due to surface uniformity and high passivity of TiAl- and ZrAl-oxides.

AB - We investigated the thermal stability of the Ta-, ZrAl- and TiAl-based synthetic bottom spin valves. In the as-deposited state, the MR ratios of ZrAl- and TiAl-based synthetic SVs (SSV) are similar to that of the Ta-based SV. However, after annealed at 400 °C for 10 min, the MR ratio of Ta-based SV decreased by 42.5% (from 7.43% to 4.27%). On the other hand, the MR ratio of ZrAl- and TiAl-based SSVs increased 0.3% (from 7.37% to 7.39%) and 13.3% (from 7.47% to 8.46%), respectively. Auger depth profile clearly showed that ZrAl- and TiAl-based SSVs have higher interdiffusion resistance than Ta-based SV. Especially, diffusion of Mn from antiferromagnet layer to pinned layer was suppressed in TiAl-based SVs. The root-mean-square (RMS) roughness of the TiAl layer (0.11 nm) was much smaller than those of the ZrAl (0.16 nm) and Ta layer (0.43 nm). Due to high affinity of Ti or Al with oxygen, very stable and dense TiAl-oxides were formed at the surface during annealing. Thermal stability of TiAl- and ZrAl-based SSVs was enhanced due to surface uniformity and high passivity of TiAl- and ZrAl-oxides.

KW - Interdiffusion

KW - Synthetic spin valve

KW - Thermal stability

KW - TiAl

KW - ZrAl

UR - http://www.scopus.com/inward/record.url?scp=33847631201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847631201&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.592

DO - 10.1016/j.jmmm.2006.10.592

M3 - Article

AN - SCOPUS:33847631201

VL - 310

SP - 1908

EP - 1910

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

SN - 0304-8853

IS - 2 SUPPL. PART 3

ER -