Effect of NH 3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

Qian Sun, Christopher D. Yerino, Yu Zhang, Yong Suk Cho, Soon Yong Kwon, Bo Hyun Kong, Hyung Koun Cho, In-Hwan Lee, Jung Han

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16 Citations (Scopus)


This paper reports a study of the effect of NH 3 flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH 3 flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1̄ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH 3 flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1̄ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy.

Original languageEnglish
Pages (from-to)3824-3829
Number of pages6
JournalJournal of Crystal Growth
Issue number15
Publication statusPublished - 2009 Jul 15
Externally publishedYes



  • A1. Morphology
  • A1. Planar defects
  • A1. X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B2. Nonpolar
  • B2. Semiconducting gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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