Effect of NH3 flow rate on m-plane GaN growth on m-plane SiC by metalorganic chemical vapor deposition

Qian Sun, Christopher D. Yerino, Yu Zhang, Yong Suk Cho, Soon Yong Kwon, Bo Hyun Kong, Hyung Koun Cho, In Hwan Lee, Jung Han

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

This paper reports a study of the effect of NH3 flow rate on m-plane GaN growth on m-plane SiC with an AlN buffer layer. It is found that a reduced NH3 flow rate during m-plane GaN growth can greatly improve the recovery of in situ optical reflectance and the surface morphology, and narrow down the on-axis (1 0 1̄ 0) X-ray rocking curve (XRC) measured along the in-plane a-axis. The surface striation along the in-plane a-axis, a result of GaN island coalescence along the in-plane c-axis, strongly depends on the NH3 flow rate, an observation consistent with our recent study of kinetic Wulff plots. The pronounced broadening of the (1 0 1̄ 0) XRC measured along the c-axis is attributed to the limited lateral coherence length of GaN domains along the c-axis, due to the presence of a high density of basal-plane stacking faults, most of which are formed at the GaN/AlN interface, according to transmission electron microscopy.

Original languageEnglish
Pages (from-to)3824-3829
Number of pages6
JournalJournal of Crystal Growth
Volume311
Issue number15
DOIs
Publication statusPublished - 2009 Jul 15
Externally publishedYes

Keywords

  • A1. Morphology
  • A1. Planar defects
  • A1. X-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B2. Nonpolar
  • B2. Semiconducting gallium nitride

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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