Abstract
The effects of nitrogen doping on Ge2Sb2Te 5 (GST) films for chemical mechanical polishing (CMP) and their performance were investigated. Nitrogen doping was controlled using a rapid thermal annealing system with nitrogen gas flow rates that varied from 0 to 20 sccm at 300 °C. The material removal rate, surface characteristics and crystal structure of the nitrogen doped GST films after CMP were examined by X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. XRD patterns revealed that the intensities of crystalline diffraction peaks decreased with increasing nitrogen flow rate. With increasing flow rate, the material removal rate and surface roughness of GST films reduced owing to nitrogen doping effects. Current-voltage (I-V) characteristics of the nitrogen doped GST films after CMP showed changes in the threshold voltage owing to changes in crystallization and surface roughness. Further, Nitrogen doped GST films in CMP showed a strong correlation with material removal rate, surface roughness, and crystallization.
| Original language | English |
|---|---|
| Article number | 031402 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 53 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Effect of nitrogen doping on the performance of Ge2Sb 2Te5 films in chemical mechanical polishing. / Shin, Dong Hee; Song, Min Jung; Kim, Jin Wook; Kim, Gyu Hyun; Hong, Kwon; Lim, Dae-Soon.
In: Japanese Journal of Applied Physics, Vol. 53, No. 3, 031402, 01.01.2014.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of nitrogen doping on the performance of Ge2Sb 2Te5 films in chemical mechanical polishing
AU - Shin, Dong Hee
AU - Song, Min Jung
AU - Kim, Jin Wook
AU - Kim, Gyu Hyun
AU - Hong, Kwon
AU - Lim, Dae-Soon
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The effects of nitrogen doping on Ge2Sb2Te 5 (GST) films for chemical mechanical polishing (CMP) and their performance were investigated. Nitrogen doping was controlled using a rapid thermal annealing system with nitrogen gas flow rates that varied from 0 to 20 sccm at 300 °C. The material removal rate, surface characteristics and crystal structure of the nitrogen doped GST films after CMP were examined by X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. XRD patterns revealed that the intensities of crystalline diffraction peaks decreased with increasing nitrogen flow rate. With increasing flow rate, the material removal rate and surface roughness of GST films reduced owing to nitrogen doping effects. Current-voltage (I-V) characteristics of the nitrogen doped GST films after CMP showed changes in the threshold voltage owing to changes in crystallization and surface roughness. Further, Nitrogen doped GST films in CMP showed a strong correlation with material removal rate, surface roughness, and crystallization.
AB - The effects of nitrogen doping on Ge2Sb2Te 5 (GST) films for chemical mechanical polishing (CMP) and their performance were investigated. Nitrogen doping was controlled using a rapid thermal annealing system with nitrogen gas flow rates that varied from 0 to 20 sccm at 300 °C. The material removal rate, surface characteristics and crystal structure of the nitrogen doped GST films after CMP were examined by X-ray diffraction (XRD), scanning electron microscopy, and atomic force microscopy. XRD patterns revealed that the intensities of crystalline diffraction peaks decreased with increasing nitrogen flow rate. With increasing flow rate, the material removal rate and surface roughness of GST films reduced owing to nitrogen doping effects. Current-voltage (I-V) characteristics of the nitrogen doped GST films after CMP showed changes in the threshold voltage owing to changes in crystallization and surface roughness. Further, Nitrogen doped GST films in CMP showed a strong correlation with material removal rate, surface roughness, and crystallization.
UR - http://www.scopus.com/inward/record.url?scp=84903152641&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84903152641&partnerID=8YFLogxK
U2 - 10.7567/JJAP.53.031402
DO - 10.7567/JJAP.53.031402
M3 - Article
AN - SCOPUS:84903152641
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 3
M1 - 031402
ER -