Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes

Sang Youl Lee, Kwang Ki Choi, Hwan Hee Jeong, Eun Joo Kim, June O. Song, Joon Woo Jeon, Tae Yeon Seong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We investigated the effect of O2 plasma-induced current blocking regions (O2 -CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O2 plasma rf power. The VLEDs fabricated with the O2 -CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O2 -CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O2-CBR effect is due to the generation of donor-like defects at the p-GaN surface.

Original languageEnglish
Article number041203
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume29
Issue number4
DOIs
Publication statusPublished - 2011 Jul 1

Fingerprint

Induced currents
oxygen plasma
Light emitting diodes
light emitting diodes
Plasmas
Oxygen
Photoelectron spectroscopy
X ray spectroscopy
photoelectric emission
Core levels
Tin oxides
Binding energy
indium oxides
Indium
spectroscopy
tin oxides
x rays
binding energy
Defects
output

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes. / Lee, Sang Youl; Choi, Kwang Ki; Jeong, Hwan Hee; Kim, Eun Joo; Song, June O.; Jeon, Joon Woo; Seong, Tae Yeon.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 29, No. 4, 041203, 01.07.2011.

Research output: Contribution to journalArticle

@article{c0bd43bb9b48496a9539811e8f88d056,
title = "Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes",
abstract = "We investigated the effect of O2 plasma-induced current blocking regions (O2 -CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O2 plasma rf power. The VLEDs fabricated with the O2 -CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O2 -CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O2-CBR effect is due to the generation of donor-like defects at the p-GaN surface.",
author = "Lee, {Sang Youl} and Choi, {Kwang Ki} and Jeong, {Hwan Hee} and Kim, {Eun Joo} and Song, {June O.} and Jeon, {Joon Woo} and Seong, {Tae Yeon}",
year = "2011",
month = "7",
day = "1",
doi = "10.1116/1.3607315",
language = "English",
volume = "29",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "4",

}

TY - JOUR

T1 - Effect of oxygen plasma-induced current blocking on the performance of GaN-based vertical light-emitting diodes

AU - Lee, Sang Youl

AU - Choi, Kwang Ki

AU - Jeong, Hwan Hee

AU - Kim, Eun Joo

AU - Song, June O.

AU - Jeon, Joon Woo

AU - Seong, Tae Yeon

PY - 2011/7/1

Y1 - 2011/7/1

N2 - We investigated the effect of O2 plasma-induced current blocking regions (O2 -CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O2 plasma rf power. The VLEDs fabricated with the O2 -CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O2 -CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O2-CBR effect is due to the generation of donor-like defects at the p-GaN surface.

AB - We investigated the effect of O2 plasma-induced current blocking regions (O2 -CBRs) on the performance of GaN-based vertical light-emitting diodes (VLEDs) as a function of the O2 plasma rf power. The VLEDs fabricated with the O2 -CBRs give forward voltages in the range 3.41-3.48 V at 350 mA, which are slightly higher than those in the case of VLEDs with and without SiO2 current-blocking layers (CBLs). The output powers of VLEDs with O2 -CBRs for rf powers of 50 and 100 W are 400.2 and 399.4 mW, respectively, which are slightly higher than those of the VLEDs with SiO2 CBLs. Indium tin oxide (ITO)-based contacts to p-GaN show rectifying behaviors with Schottky barrier heights of 1.89 and 2.78 eV, when treated at rf powers of 50 and 100 W, respectively. X-ray photoemission spectroscopy (XPS) results show that for the samples treated at 50 W, the Ga 2p core level moves toward the higher binding-energy side as compared to that of the reference sample without plasma treatment. On the basis of the electrical characteristics and XPS results, we state that the O2-CBR effect is due to the generation of donor-like defects at the p-GaN surface.

UR - http://www.scopus.com/inward/record.url?scp=80051892693&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051892693&partnerID=8YFLogxK

U2 - 10.1116/1.3607315

DO - 10.1116/1.3607315

M3 - Article

VL - 29

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 4

M1 - 041203

ER -