Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy

A. H. Onstine, B. P. Gila, Ji Hyun Kim, D. Stodilka, K. Allums, C. R. Abernathy, F. Ren, S. J. Pearton

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of oxygen pressure on MgO grown by RF plasma assisted gas-source molecular beam epitaxy was investigated. Increasing oxygen pressure was found to decrease the growth rate, improve the morphology and reduce the Mg/O ratio to near that obtained from bulk single crystal MgO. By contrast, the electrical characteristics of MgO/GaN diodes showed continual improvement in breakdown field and interface state density as the pressure was decreased. The lowest pressure tested, 1×10 -5Torr, produced the lowest D it, 3×10 11 eV -1 cm -2, and the highest V BD, 4.4 MV/cm. Cross sectional transmission electron microscopy of the MgO grown at the lowest pressure showed the initial 40 monolayers to be epitaxial, with the remainder of the layer appearing to be fine grained poly-crystal. Comparisons with films grown using an electron cyclotron resonance (ECR) plasma suggest that higher ion energies are desirable for obtaining the best electrical characteristics.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages285-290
Number of pages6
Volume743
Publication statusPublished - 2002
Externally publishedYes
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: 2002 Dec 22002 Dec 6

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period02/12/202/12/6

Fingerprint

Magnesium Oxide
Gas source molecular beam epitaxy
Plasma Gases
Magnesia
Oxygen
Plasmas
Electron cyclotron resonance
Interface states
Monolayers
Diodes
Single crystals
Ions
Transmission electron microscopy
Crystals

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Onstine, A. H., Gila, B. P., Kim, J. H., Stodilka, D., Allums, K., Abernathy, C. R., ... Pearton, S. J. (2002). Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 285-290)

Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy. / Onstine, A. H.; Gila, B. P.; Kim, Ji Hyun; Stodilka, D.; Allums, K.; Abernathy, C. R.; Ren, F.; Pearton, S. J.

Materials Research Society Symposium - Proceedings. ed. / C. Wetzel; E.T. Yu; J.S. Speck; A. Rizzi; Y. Arakawa. Vol. 743 2002. p. 285-290.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Onstine, AH, Gila, BP, Kim, JH, Stodilka, D, Allums, K, Abernathy, CR, Ren, F & Pearton, SJ 2002, Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy. in C Wetzel, ET Yu, JS Speck, A Rizzi & Y Arakawa (eds), Materials Research Society Symposium - Proceedings. vol. 743, pp. 285-290, Gan and Related Alloys - 2002, Boston, MA, United States, 02/12/2.
Onstine AH, Gila BP, Kim JH, Stodilka D, Allums K, Abernathy CR et al. Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy. In Wetzel C, Yu ET, Speck JS, Rizzi A, Arakawa Y, editors, Materials Research Society Symposium - Proceedings. Vol. 743. 2002. p. 285-290
Onstine, A. H. ; Gila, B. P. ; Kim, Ji Hyun ; Stodilka, D. ; Allums, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J. / Effect of oxygen pressure on magnesium oxide dielectrics grown on GaN by plasma assisted gas source molecular beam epitaxy. Materials Research Society Symposium - Proceedings. editor / C. Wetzel ; E.T. Yu ; J.S. Speck ; A. Rizzi ; Y. Arakawa. Vol. 743 2002. pp. 285-290
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