Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering

Kyung Hoon Cho, Chang Hak Choi, Joo Young Choi, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

Original languageEnglish
Pages (from-to)984-987
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
Publication statusPublished - 2008


  • Bi NbO (BN
  • High dielectric constant
  • Leakage current density
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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