Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering

Kyung Hoon Cho, Chang Hak Choi, Joo Young Choi, Tae Geun Seong, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

Original languageEnglish
Pages (from-to)984-987
Number of pages4
JournalIEEE Electron Device Letters
Volume29
Issue number9
DOIs
Publication statusPublished - 2008 Sep 5

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Magnetron sputtering
Electric properties
Partial pressure
Oxygen
Leakage currents
Current density
Oxygen vacancies
Capacitance
Ions

Keywords

  • Bi NbO (BN
  • High dielectric constant
  • Leakage current density
  • Metal-insulator-metal (MIM) capacitor
  • Temperature coefficient of capacitance (TCC)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering. / Cho, Kyung Hoon; Choi, Chang Hak; Choi, Joo Young; Seong, Tae Geun; Nahm, Sahn; Kang, Chong Yun; Yoon, Seok Jin; Kim, Jong Hee.

In: IEEE Electron Device Letters, Vol. 29, No. 9, 05.09.2008, p. 984-987.

Research output: Contribution to journalArticle

Cho, Kyung Hoon ; Choi, Chang Hak ; Choi, Joo Young ; Seong, Tae Geun ; Nahm, Sahn ; Kang, Chong Yun ; Yoon, Seok Jin ; Kim, Jong Hee. / Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering. In: IEEE Electron Device Letters. 2008 ; Vol. 29, No. 9. pp. 984-987.
@article{a10a98406ad04de3a2281c9f4e5ea03b,
title = "Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering",
abstract = "Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.",
keywords = "Bi NbO (BN, High dielectric constant, Leakage current density, Metal-insulator-metal (MIM) capacitor, Temperature coefficient of capacitance (TCC)",
author = "Cho, {Kyung Hoon} and Choi, {Chang Hak} and Choi, {Joo Young} and Seong, {Tae Geun} and Sahn Nahm and Kang, {Chong Yun} and Yoon, {Seok Jin} and Kim, {Jong Hee}",
year = "2008",
month = "9",
day = "5",
doi = "10.1109/LED.2008.2001476",
language = "English",
volume = "29",
pages = "984--987",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - Effect of oxygen pressure on the electrical properties of Bi5 Nb3O15 films grown by RF magnetron sputtering

AU - Cho, Kyung Hoon

AU - Choi, Chang Hak

AU - Choi, Joo Young

AU - Seong, Tae Geun

AU - Nahm, Sahn

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Kim, Jong Hee

PY - 2008/9/5

Y1 - 2008/9/5

N2 - Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

AB - Bi5Nb3O15 (B5N3 films grown under a low oxygen partial pressure (OP) of 1.7 mtorr showed a high leakage current density of 0.1 A/cm2 at 1.0 MV/cm. However, the leakage current density decreased with increasing OP to a minimum of 5.8 × 109 A/cm2 for the film grown under 5.1 mtorr due to the decreased number of oxygen vacancies. This film also showed an improved breakdown field of 2.2 MV/cm and a large capacitance density of 24.9 fF/μm2. The electrical properties of the film, however, deteriorated with a further increase in OP, which is probably due to the formation of oxygen interstitial ions. Therefore, superior electrical properties for the B5 N3 film can be obtained by careful control of OP.

KW - Bi NbO (BN

KW - High dielectric constant

KW - Leakage current density

KW - Metal-insulator-metal (MIM) capacitor

KW - Temperature coefficient of capacitance (TCC)

UR - http://www.scopus.com/inward/record.url?scp=50649102398&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=50649102398&partnerID=8YFLogxK

U2 - 10.1109/LED.2008.2001476

DO - 10.1109/LED.2008.2001476

M3 - Article

AN - SCOPUS:50649102398

VL - 29

SP - 984

EP - 987

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -