Effect of oxygen pressure on the resistive switching behavior of amorphous Pr0.7Ca0.3MnO3 films

Tae Geun Seong, Kyu Bum Choi, Beom Seok Lee, Bo Yun Kim, Joon Ho Oh, Kyoo Ho Jung, Kwon Hong, Sahn Nahm

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Amorphous Pr0.7Ca0.3MnO3 (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 104 sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.

Original languageEnglish
Pages (from-to)P35-P37
JournalECS Solid State Letters
Volume2
Issue number4
DOIs
Publication statusPublished - 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Effect of oxygen pressure on the resistive switching behavior of amorphous Pr<sub>0.7</sub>Ca<sub>0.3</sub>MnO<sub>3</sub> films'. Together they form a unique fingerprint.

  • Cite this

    Seong, T. G., Choi, K. B., Lee, B. S., Kim, B. Y., Oh, J. H., Jung, K. H., Hong, K., & Nahm, S. (2013). Effect of oxygen pressure on the resistive switching behavior of amorphous Pr0.7Ca0.3MnO3 films. ECS Solid State Letters, 2(4), P35-P37. https://doi.org/10.1149/2.004304ssl