Effect of oxygen pressure on the resistive switching behavior of amorphous Pr0.7Ca0.3MnO3 films

Tae Geun Seong; Kyu Bum Choi; Beom Seok Lee; Bo Yun Kim; Joon Ho Oh; Kyoo Ho Jung; Kwon Hong; Sahn Nahm

doi:10.1149/2.004304ssl

Effect of oxygen pressure on the resistive switching behavior of amorphous Pr_0.7Ca_0.3MnO₃ films

Tae Geun Seong, Kyu Bum Choi, Beom Seok Lee, Bo Yun Kim, Joon Ho Oh, Kyoo Ho Jung, Kwon Hong, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Amorphous Pr_0.7Ca_0.3MnO₃ (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 10⁴ sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.

Original language	English
Pages (from-to)	P35-P37
Journal	ECS Solid State Letters
Volume	2
Issue number	4
DOIs	https://doi.org/10.1149/2.004304ssl
Publication status	Published - 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Effect of oxygen pressure on the resistive switching behavior of amorphous Pr0.7Ca0.3MnO3 films",

abstract = "Amorphous Pr0.7Ca0.3MnO3 (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 104 sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.",

author = "Seong, {Tae Geun} and Choi, {Kyu Bum} and Lee, {Beom Seok} and Kim, {Bo Yun} and Oh, {Joon Ho} and Jung, {Kyoo Ho} and Kwon Hong and Sahn Nahm",

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volume = "2",

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publisher = "The Electrochemical Society",

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TY - JOUR

T1 - Effect of oxygen pressure on the resistive switching behavior of amorphous Pr0.7Ca0.3MnO3 films

AU - Seong, Tae Geun

AU - Choi, Kyu Bum

AU - Lee, Beom Seok

AU - Kim, Bo Yun

AU - Oh, Joon Ho

AU - Jung, Kyoo Ho

AU - Hong, Kwon

AU - Nahm, Sahn

PY - 2013

Y1 - 2013

N2 - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 104 sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.

AB - Amorphous Pr0.7Ca0.3MnO3 (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 104 sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.

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Effect of oxygen pressure on the resistive switching behavior of amorphous Pr_0.7Ca_0.3MnO₃ films

Abstract

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