Amorphous Pr0.7Ca0.3MnO3 (APCMO) films grown under low oxygen pressures (OPs) (≤ 100 mTorr) at room temperature (RT) exhibited typical bipolar switching behavior, which disappeared for APCMO films grown under high OPs because of the increased surface roughness and porosity. The Pt/APCMO/TiN device grown under a 5.0 mTorr OP exhibited a stable bipolar resistive switching behavior over 300 cycles, which did not degrade after 104 sec at RT. The resistance of this APCMO film decreased with increasing device area in both low- and high-resistance states. The bipolar resistive switching behavior of the Pt/APCMO/TiN device can be explained by the trap-charged space-charge-limited current mechanism.
|Journal||ECS Solid State Letters|
|Publication status||Published - 2013|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering