Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film

Chang Hak Choi, Joo Young Choi, Kyung Hoon Cho, Myong Jae Yoo, Sahn Nahm, Chong Yun Kang, Seok Jin Yoon, Jong Hee Kim

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Abstract

Bi6Ti5TeO22 film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi6Ti5TeO 22 films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number11
DOIs
Publication statusPublished - 2008 Sep 22

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ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

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