Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film

Chang Hak Choi, Joo Young Choi, Kyung Hoon Cho, Myong Jae Yoo, Sahn Nahm, Chong-Yun Kang, Seok Jin Yoon, Jong Hee Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Bi6Ti5TeO22 film grown under a low oxygen pressure (OP) of 0.21 Pa showed a low breakdown field of 0.25 MVcm which increased with increasing the OP to 0.60 MVcm for the film grown under the OP of 0.59 Pa. The breakdown field decreased when the OP exceeded 0.59 Pa, due to the formation of oxygen interstitial ions. A small amount of Mn doping also increased the breakdown field of the Bi6Ti5TeO 22 films grown under a low OP. These improvements were related to the decreased number of intrinsic oxygen vacancies identified by the variation of metallic telluride states in the photoemission spectra of the Te 3d level.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number11
DOIs
Publication statusPublished - 2008 Sep 22

Fingerprint

Oxygen vacancies
Electric properties
electrical properties
Oxygen
Thin films
oxygen
thin films
breakdown
Photoemission
tellurides
Doping (additives)
interstitials
Ions
photoelectric emission
ions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film. / Choi, Chang Hak; Choi, Joo Young; Cho, Kyung Hoon; Yoo, Myong Jae; Nahm, Sahn; Kang, Chong-Yun; Yoon, Seok Jin; Kim, Jong Hee.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 11, 22.09.2008.

Research output: Contribution to journalArticle

Choi, Chang Hak ; Choi, Joo Young ; Cho, Kyung Hoon ; Yoo, Myong Jae ; Nahm, Sahn ; Kang, Chong-Yun ; Yoon, Seok Jin ; Kim, Jong Hee. / Effect of oxygen vacancies on the electrical properties of Bi 6Ti5TeO22 thin film. In: Electrochemical and Solid-State Letters. 2008 ; Vol. 11, No. 11.
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