Effect of photochemical hydrogen doping on the electrical properties of ZnO thin-film transistors

Chan Young Kim, Ju Hyun Park, Tae Geun Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We examined the effect of photochemical hydrogen doping on the performance of ZnO thin-film transistors (TFTs). H atoms were doped into the ZnO active layers (ZnO:H) by irradiation at two different ultraviolet (UV) wavelengths, 185 and 254 nm, for 0, 2, 4, and 6 h. Then, the ZnO surface before and after H doping was analyzed using X-ray photoelectron spectroscopy and X-ray diffraction. The ZnO surface exhibited metal–OH bonding states and the oxygen vacancy increased with the UV irradiation time. In addition, the surface roughness of the ZnO thin film decreased from 1.634 to 1.385 nm because of the increasing hydrophilicity as the oxygen vacancy increased, reducing the trap sites and electron scattering at the channel/insulator interface, thus improving the TFT performance. Among the samples, the ZnO:H TFTs with 6 h of UV irradiation time exhibited the best performance, the saturation mobility increased from 1.56 to 14.2 cm2/Vs, the on/off ratio increased from 105 to 1.1 × 106, and the threshold voltage decreased from 5.42 to 2 V compared to the ZnO TFTs with no UV irradiation.

Original languageEnglish
Pages (from-to)300-305
Number of pages6
JournalJournal of Alloys and Compounds
Volume732
DOIs
Publication statusPublished - 2018 Jan 25

Fingerprint

Thin film transistors
Hydrogen
Electric properties
Doping (additives)
Irradiation
Oxygen vacancies
Electron scattering
Hydrophilicity
Threshold voltage
X ray photoelectron spectroscopy
Surface roughness
X ray diffraction
Thin films
Wavelength
Atoms

Keywords

  • Photochemical H doping
  • Saturation mobility
  • TFT
  • UV irradiation
  • ZnO

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

Effect of photochemical hydrogen doping on the electrical properties of ZnO thin-film transistors. / Kim, Chan Young; Park, Ju Hyun; Kim, Tae Geun.

In: Journal of Alloys and Compounds, Vol. 732, 25.01.2018, p. 300-305.

Research output: Contribution to journalArticle

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N2 - We examined the effect of photochemical hydrogen doping on the performance of ZnO thin-film transistors (TFTs). H atoms were doped into the ZnO active layers (ZnO:H) by irradiation at two different ultraviolet (UV) wavelengths, 185 and 254 nm, for 0, 2, 4, and 6 h. Then, the ZnO surface before and after H doping was analyzed using X-ray photoelectron spectroscopy and X-ray diffraction. The ZnO surface exhibited metal–OH bonding states and the oxygen vacancy increased with the UV irradiation time. In addition, the surface roughness of the ZnO thin film decreased from 1.634 to 1.385 nm because of the increasing hydrophilicity as the oxygen vacancy increased, reducing the trap sites and electron scattering at the channel/insulator interface, thus improving the TFT performance. Among the samples, the ZnO:H TFTs with 6 h of UV irradiation time exhibited the best performance, the saturation mobility increased from 1.56 to 14.2 cm2/Vs, the on/off ratio increased from 105 to 1.1 × 106, and the threshold voltage decreased from 5.42 to 2 V compared to the ZnO TFTs with no UV irradiation.

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