Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

Shin Kim; Eunsoon Oh; J. U. Lee; D. S. Kim; S. Lee; J. K. Furdyna

doi:10.1063/1.2216108

Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

Shin Kim, Eunsoon Oh, J. U. Lee, D. S. Kim, S. Lee, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We measured the transmission spectra and the time-resolved differential reflectivity ΔR in Ga _1-xMn _xAs for x≤0.05 for several excitation wavelengths. The sign of ΔR in Ga _1-xMn _xAs (x =0.015 and x=0.03) was negative for photon energy larger than band gap at room temperature. The negative component of ΔR was explained by defect induced absorption and/or the reduction of exciton bleaching, rather than by the change in density of near band edge states associated with Mn incorporation. For Ga _0.95Mn _0.05As, absorption edge broadening was observed in the transmission spectra and the induced absorption effect was reduced by the screening of Mn local potential by photocarriers.

Original language	English
Article number	262101
Journal	Applied Physics Letters
Volume	88
Issue number	26
DOIs	https://doi.org/10.1063/1.2216108
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2216108

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title = "Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs",

abstract = "We measured the transmission spectra and the time-resolved differential reflectivity ΔR in Ga 1-xMn xAs for x≤0.05 for several excitation wavelengths. The sign of ΔR in Ga 1-xMn xAs (x =0.015 and x=0.03) was negative for photon energy larger than band gap at room temperature. The negative component of ΔR was explained by defect induced absorption and/or the reduction of exciton bleaching, rather than by the change in density of near band edge states associated with Mn incorporation. For Ga 0.95Mn 0.05As, absorption edge broadening was observed in the transmission spectra and the induced absorption effect was reduced by the screening of Mn local potential by photocarriers.",

author = "Shin Kim and Eunsoon Oh and Lee, {J. U.} and Kim, {D. S.} and S. Lee and Furdyna, {J. K.}",

note = "Funding Information: This work was supported by Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R04-2003-000-10020-0) and KOSEF (Grant No. R01-2005-000-10616-0). One of the authors (S.L.) acknowledgesthe Korea Science and Engineering Foundation(KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University. ",

year = "2006",

doi = "10.1063/1.2216108",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

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TY - JOUR

T1 - Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

AU - Kim, Shin

AU - Oh, Eunsoon

AU - Lee, J. U.

AU - Kim, D. S.

AU - Lee, S.

AU - Furdyna, J. K.

N1 - Funding Information: This work was supported by Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R04-2003-000-10020-0) and KOSEF (Grant No. R01-2005-000-10616-0). One of the authors (S.L.) acknowledgesthe Korea Science and Engineering Foundation(KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University.

PY - 2006

Y1 - 2006

N2 - We measured the transmission spectra and the time-resolved differential reflectivity ΔR in Ga 1-xMn xAs for x≤0.05 for several excitation wavelengths. The sign of ΔR in Ga 1-xMn xAs (x =0.015 and x=0.03) was negative for photon energy larger than band gap at room temperature. The negative component of ΔR was explained by defect induced absorption and/or the reduction of exciton bleaching, rather than by the change in density of near band edge states associated with Mn incorporation. For Ga 0.95Mn 0.05As, absorption edge broadening was observed in the transmission spectra and the induced absorption effect was reduced by the screening of Mn local potential by photocarriers.

AB - We measured the transmission spectra and the time-resolved differential reflectivity ΔR in Ga 1-xMn xAs for x≤0.05 for several excitation wavelengths. The sign of ΔR in Ga 1-xMn xAs (x =0.015 and x=0.03) was negative for photon energy larger than band gap at room temperature. The negative component of ΔR was explained by defect induced absorption and/or the reduction of exciton bleaching, rather than by the change in density of near band edge states associated with Mn incorporation. For Ga 0.95Mn 0.05As, absorption edge broadening was observed in the transmission spectra and the induced absorption effect was reduced by the screening of Mn local potential by photocarriers.

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U2 - 10.1063/1.2216108

DO - 10.1063/1.2216108

M3 - Article

AN - SCOPUS:33745699634

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 262101

ER -

Effect of point defect and Mn concentration in time-resolved differential reflection in GaMnAs

Abstract

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