Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

Seong Guk Jeong, Hyung Youl Park, Myung Hoon Lim, Woo Shik Jung, Hyun-Yong Yu, Yonghan Roh, Jin Hong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)


In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.

Original languageEnglish
Pages (from-to)1511-1515
Number of pages5
JournalOrganic Electronics: physics, materials, applications
Issue number9
Publication statusPublished - 2012 Sep 1



  • Fermi-level pinning
  • Metal-pentacene
  • Pentacene

ASJC Scopus subject areas

  • Biomaterials
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Chemistry(all)
  • Condensed Matter Physics

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