Abstract
In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 1511-1515 |
| Number of pages | 5 |
| Journal | Organic Electronics: physics, materials, applications |
| Volume | 13 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2012 Sep 1 |
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Keywords
- Fermi-level pinning
- Metal-pentacene
- Pentacene
ASJC Scopus subject areas
- Biomaterials
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Electrical and Electronic Engineering
- Chemistry(all)
- Condensed Matter Physics
Cite this
Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions. / Jeong, Seong Guk; Park, Hyung Youl; Lim, Myung Hoon; Jung, Woo Shik; Yu, Hyun-Yong; Roh, Yonghan; Park, Jin Hong.
In: Organic Electronics: physics, materials, applications, Vol. 13, No. 9, 01.09.2012, p. 1511-1515.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions
AU - Jeong, Seong Guk
AU - Park, Hyung Youl
AU - Lim, Myung Hoon
AU - Jung, Woo Shik
AU - Yu, Hyun-Yong
AU - Roh, Yonghan
AU - Park, Jin Hong
PY - 2012/9/1
Y1 - 2012/9/1
N2 - In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.
AB - In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.
KW - Fermi-level pinning
KW - Metal-pentacene
KW - Pentacene
UR - http://www.scopus.com/inward/record.url?scp=84861674973&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84861674973&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2012.05.030
DO - 10.1016/j.orgel.2012.05.030
M3 - Article
AN - SCOPUS:84861674973
VL - 13
SP - 1511
EP - 1515
JO - Organic Electronics: physics, materials, applications
JF - Organic Electronics: physics, materials, applications
SN - 1566-1199
IS - 9
ER -