Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

Seong Guk Jeong; Hyung Youl Park; Myung Hoon Lim; Woo Shik Jung; Hyun Yong Yu; Yonghan Roh; Jin Hong Park

doi:10.1016/j.orgel.2012.05.030

Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

Seong Guk Jeong, Hyung Youl Park, Myung Hoon Lim, Woo Shik Jung, Hyun Yong Yu, Yonghan Roh, Jin Hong Park

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N ₂ ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.

Original language	English
Pages (from-to)	1511-1515
Number of pages	5
Journal	Organic Electronics
Volume	13
Issue number	9
DOIs	https://doi.org/10.1016/j.orgel.2012.05.030
Publication status	Published - 2012 Sep

Keywords

Fermi-level pinning
Metal-pentacene
Pentacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Chemistry(all)
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2012.05.030

Cite this

@article{1e0c883ccc424ed88fd902d44ed53f8d,

title = "Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions",

abstract = "In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.",

keywords = "Fermi-level pinning, Metal-pentacene, Pentacene",

author = "Jeong, {Seong Guk} and Park, {Hyung Youl} and Lim, {Myung Hoon} and Jung, {Woo Shik} and Yu, {Hyun Yong} and Yonghan Roh and Park, {Jin Hong}",

note = "Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2012-0003218 ).",

year = "2012",

month = sep,

doi = "10.1016/j.orgel.2012.05.030",

language = "English",

volume = "13",

pages = "1511--1515",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier",

number = "9",

}

TY - JOUR

T1 - Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

AU - Jeong, Seong Guk

AU - Park, Hyung Youl

AU - Lim, Myung Hoon

AU - Jung, Woo Shik

AU - Yu, Hyun Yong

AU - Roh, Yonghan

AU - Park, Jin Hong

N1 - Funding Information: This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology ( NRF-2012-0003218 ).

PY - 2012/9

Y1 - 2012/9

N2 - In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.

AB - In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.

KW - Fermi-level pinning

KW - Metal-pentacene

KW - Pentacene

UR - http://www.scopus.com/inward/record.url?scp=84861674973&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2012.05.030

DO - 10.1016/j.orgel.2012.05.030

M3 - Article

AN - SCOPUS:84861674973

VL - 13

SP - 1511

EP - 1515

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

IS - 9

ER -

Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this