Abstract
In this work, we investigated the material properties of pentacene films with XRD and AFM analyses as it were annealed from 25 to 150 °C in N 2 ambient. Electrical characterization of the films was also performed by transfer length method (TLM) at each temperature. These results were then correlated with the Fermi level pinning phenomenon in Al- and Ti-pentacene junctions. For both junctions, it was found that as the surface quality of the pentacene films changed with increase in annealing temperature, the hole-barrier heights (h-BH) that were modulated by Fermi level pinning were effectively reduced.
| Original language | English |
|---|---|
| Pages (from-to) | 1511-1515 |
| Number of pages | 5 |
| Journal | Organic Electronics |
| Volume | 13 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2012 Sep |
Keywords
- Fermi-level pinning
- Metal-pentacene
- Pentacene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
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Cite this
Jeong, S. G., Park, H. Y., Lim, M. H., Jung, W. S., Yu, H. Y., Roh, Y., & Park, J. H. (2012). Effect of post-fabrication thermal annealing on Fermi-level pinning phenomenon in metal-pentacene junctions. Organic Electronics, 13(9), 1511-1515. https://doi.org/10.1016/j.orgel.2012.05.030