Effect of precursor on epitaxially grown of ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate by hydrothermal technique

Trilochan Sahoo, Jin Woo Ju, V. Kannan, Jin Soo Kim, Yeon Tae Yu, Myung Soo Han, Young Sik Park, In-Hwan Lee

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8 Citations (Scopus)


Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 °C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the film grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.

Original languageEnglish
Pages (from-to)502-509
Number of pages8
JournalMaterials Research Bulletin
Issue number3
Publication statusPublished - 2008 Mar 4
Externally publishedYes



  • A. Optical materials
  • B. Chemical synthesis
  • B. Epitaxial growth
  • C. Electron micrpscopy
  • D. Luminescence

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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