Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al₂O₃ gate oxide

Engineering & Materials Science

• Proton irradiation 100%
• Oxide semiconductors 68%
• High electron mobility transistors 66%
• Aluminum oxide 55%
• Oxides 49%
• Metals 36%
• Irradiation 35%
• Sheet resistance 31%
• Drain current 29%
• Two dimensional electron gas 20%
• Protons 13%
• Contact resistance 13%
• Degradation 8%
• Electric potential 5%

Chemical Compounds

• Electron Mobility 68%
• Metal Oxide 47%
• Dose 44%
• Semiconductor 43%
• Proton 37%
• Oxide 31%
• Sheet Resistance 19%
• Two-Dimensional Electron Gas 14%
• Drain Current 12%
• Trap Density Measurement 12%
• Contact Resistance 10%
• Bond Energy 9%
• Energy 7%

Physics & Astronomy

• proton irradiation 70%
• high electron mobility transistors 59%
• metal oxide semiconductors 58%
• dosage 38%
• oxides 35%
• irradiation 15%
• proton energy 8%
• contact resistance 8%
• electron gas 7%
• electric contacts 7%
• degradation 6%
• traps 6%
• damage 5%