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Dive into the research topics of 'Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide'. Together they form a unique fingerprint.- Sort by
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Shihyun Ahn, Byung Jae Kim, Yi Hsuan Lin, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Jihyun Kim, Ivan I. Kravchenko
Research output: Contribution to journal › Article › peer-review