Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors

Shihyun Ahn, Chen Dong, Weidi Zhu, Byung Jae Kim, Ya His Hwang, Fan Ren, Stephen J. Pearton, Gwangseok Yang, Ji Hyun Kim, Erin Patrick, Brian Tracy, David J. Smith, Ivan I. Kravchenko

Research output: Contribution to journalArticle

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Abstract

The effects of proton irradiation energy on dc characteristics of AlGaN/GaN metal-oxide semiconductor high electron mobility transistors (MOSHEMTs) using Al<inf>2</inf>O<inf>3</inf> as the gate dielectric were studied. Al<inf>2</inf>O<inf>3</inf>/AlGaN/GaN MOSHEMTs were irradiated with a fixed proton dose of 5 × 10<sup>15</sup> cm<sup>-2</sup> at different energies of 5, 10, or 15 MeV. More degradation of the device dc characteristics was observed for lower irradiation energy due to the larger amount of nonionizing energy loss in the active region of the MOSHEMTs under these conditions. The reductions in saturation current were 95.3%, 68.3%, and 59.8% and reductions in maximum transconductance were 88%, 54.4%, and 40.7% after 5, 10, and 15 MeV proton irradiation, respectively. Both forward and reverse gate leakage current were reduced more than one order of magnitude after irradiation. The carrier removal rates for the irradiation energies employed in this study were in the range of 127-289 cm<sup>-1</sup>. These are similar to the values reported for conventional metal-gate high-electron mobility transistors under the same conditions and show that the gate dielectric does not affect the response to proton irradiation for these energies.

Original languageEnglish
Article number4928730
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume33
Issue number5
DOIs
Publication statusPublished - 2015 Sep 1

Fingerprint

Proton irradiation
proton irradiation
High electron mobility transistors
high electron mobility transistors
metal oxide semiconductors
Metals
Gate dielectrics
Irradiation
irradiation
energy
Transconductance
Leakage currents
Protons
transconductance
Energy dissipation
leakage
Degradation
energy dissipation
Oxide semiconductors
aluminum gallium nitride

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. / Ahn, Shihyun; Dong, Chen; Zhu, Weidi; Kim, Byung Jae; Hwang, Ya His; Ren, Fan; Pearton, Stephen J.; Yang, Gwangseok; Kim, Ji Hyun; Patrick, Erin; Tracy, Brian; Smith, David J.; Kravchenko, Ivan I.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 33, No. 5, 4928730, 01.09.2015.

Research output: Contribution to journalArticle

Ahn, S, Dong, C, Zhu, W, Kim, BJ, Hwang, YH, Ren, F, Pearton, SJ, Yang, G, Kim, JH, Patrick, E, Tracy, B, Smith, DJ & Kravchenko, II 2015, 'Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 33, no. 5, 4928730. https://doi.org/10.1116/1.4928730
Ahn, Shihyun ; Dong, Chen ; Zhu, Weidi ; Kim, Byung Jae ; Hwang, Ya His ; Ren, Fan ; Pearton, Stephen J. ; Yang, Gwangseok ; Kim, Ji Hyun ; Patrick, Erin ; Tracy, Brian ; Smith, David J. ; Kravchenko, Ivan I. / Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2015 ; Vol. 33, No. 5.
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AU - Ren, Fan

AU - Pearton, Stephen J.

AU - Yang, Gwangseok

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AU - Tracy, Brian

AU - Smith, David J.

AU - Kravchenko, Ivan I.

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