Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Y. Y. Xi; Y. H. Hwang; Y. L. Hsieh; S. Li; F. Ren; S. J. Pearton; E. Patrick; M. E. Law; G. Yang; H. Y. Kim; J. Kim; A. G. Baca; A. A. Allerman; C. Sanchez

doi:10.1149/06104.0179ecst

Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Y. Y. Xi, Y. H. Hwang, Y. L. Hsieh, S. Li, F. Ren, S. J. Pearton, E. Patrick, M. E. Law, G. Yang, H. Y. Kim, J. Kim, A. G. Baca, A. A. Allerman, C. Sanchez

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×10¹⁴ 1/cm². Threshold voltage shifted more positively with a dose of 2×10¹⁴ 1/cm² compared to 2×10¹³ /cm². Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×10¹⁴ 1/cm². Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.

Original language	English
Pages (from-to)	179-185
Number of pages	7
Journal	ECS Transactions
Volume	61
Issue number	4
DOIs	https://doi.org/10.1149/06104.0179ecst
Publication status	Published - 2014
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States Duration: 2014 May 11 → 2014 May 15

ASJC Scopus subject areas

Engineering(all)

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10.1149/06104.0179ecst

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Xi, Y. Y., Hwang, Y. H., Hsieh, Y. L., Li, S., Ren, F., Pearton, S. J., Patrick, E., Law, M. E., Yang, G., Kim, H. Y., Kim, J., Baca, A. G., Allerman, A. A., & Sanchez, C. (2014). Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. ECS Transactions, 61(4), 179-185. https://doi.org/10.1149/06104.0179ecst

@article{cbded774c70b410ab3cf597cb57e8bfe,

title = "Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors",

abstract = "The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×1014 1/cm2. Threshold voltage shifted more positively with a dose of 2×1014 1/cm2 compared to 2×1013 /cm2. Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×1014 1/cm2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.",

author = "Xi, {Y. Y.} and Hwang, {Y. H.} and Hsieh, {Y. L.} and S. Li and F. Ren and Pearton, {S. J.} and E. Patrick and Law, {M. E.} and G. Yang and Kim, {H. Y.} and J. Kim and Baca, {A. G.} and Allerman, {A. A.} and C. Sanchez",

note = "Publisher Copyright: {\textcopyright} 2014 by The Electrochemical Society. All rights reserved.; Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

year = "2014",

doi = "10.1149/06104.0179ecst",

language = "English",

volume = "61",

pages = "179--185",

journal = "ECS Transactions",

issn = "1938-5862",

publisher = "Electrochemical Society, Inc.",

number = "4",

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TY - JOUR

T1 - Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

AU - Xi, Y. Y.

AU - Hwang, Y. H.

AU - Hsieh, Y. L.

AU - Li, S.

AU - Ren, F.

AU - Pearton, S. J.

AU - Patrick, E.

AU - Law, M. E.

AU - Yang, G.

AU - Kim, H. Y.

AU - Kim, J.

AU - Baca, A. G.

AU - Allerman, A. A.

AU - Sanchez, C.

PY - 2014

Y1 - 2014

N2 - The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×1014 1/cm2. Threshold voltage shifted more positively with a dose of 2×1014 1/cm2 compared to 2×1013 /cm2. Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×1014 1/cm2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.

AB - The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×1014 1/cm2. Threshold voltage shifted more positively with a dose of 2×1014 1/cm2 compared to 2×1013 /cm2. Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×1014 1/cm2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.

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U2 - 10.1149/06104.0179ecst

DO - 10.1149/06104.0179ecst

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AN - SCOPUS:84925116084

SN - 1938-5862

VL - 61

SP - 179

EP - 185

JO - ECS Transactions

JF - ECS Transactions

IS - 4

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Abstract

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