Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors

Y. Y. Xi, Y. H. Hwang, Y. L. Hsieh, S. Li, F. Ren, S. J. Pearton, E. Patrick, M. E. Law, G. Yang, H. Y. Kim, Ji Hyun Kim, A. G. Baca, A. A. Allerman, C. Sanchez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×10 14 1/cm 2. Threshold voltage shifted more positively with a dose of 2×10 14 1/cm 2 compared to 2×10 13 /cm 2. Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×10 14 1/cm 2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.

Original languageEnglish
Title of host publicationECS Transactions
PublisherElectrochemical Society Inc.
Pages179-185
Number of pages7
Volume61
Edition4
DOIs
Publication statusPublished - 2014
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting - Orlando, United States
Duration: 2014 May 112014 May 15

Other

OtherSymposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting
CountryUnited States
CityOrlando
Period14/5/1114/5/15

Fingerprint

Proton irradiation
High electron mobility transistors
Irradiation
Defects
Dosimetry
Electric fields
Sheet resistance
Electric breakdown
Threshold voltage

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Xi, Y. Y., Hwang, Y. H., Hsieh, Y. L., Li, S., Ren, F., Pearton, S. J., ... Sanchez, C. (2014). Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. In ECS Transactions (4 ed., Vol. 61, pp. 179-185). Electrochemical Society Inc.. https://doi.org/10.1149/06104.0179ecst

Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. / Xi, Y. Y.; Hwang, Y. H.; Hsieh, Y. L.; Li, S.; Ren, F.; Pearton, S. J.; Patrick, E.; Law, M. E.; Yang, G.; Kim, H. Y.; Kim, Ji Hyun; Baca, A. G.; Allerman, A. A.; Sanchez, C.

ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. p. 179-185.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Xi, YY, Hwang, YH, Hsieh, YL, Li, S, Ren, F, Pearton, SJ, Patrick, E, Law, ME, Yang, G, Kim, HY, Kim, JH, Baca, AG, Allerman, AA & Sanchez, C 2014, Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. in ECS Transactions. 4 edn, vol. 61, Electrochemical Society Inc., pp. 179-185, Symposium on Wide Bandgap Semiconductor Materials and Devices 15 - 225th ECS Meeting, Orlando, United States, 14/5/11. https://doi.org/10.1149/06104.0179ecst
Xi YY, Hwang YH, Hsieh YL, Li S, Ren F, Pearton SJ et al. Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. In ECS Transactions. 4 ed. Vol. 61. Electrochemical Society Inc. 2014. p. 179-185 https://doi.org/10.1149/06104.0179ecst
Xi, Y. Y. ; Hwang, Y. H. ; Hsieh, Y. L. ; Li, S. ; Ren, F. ; Pearton, S. J. ; Patrick, E. ; Law, M. E. ; Yang, G. ; Kim, H. Y. ; Kim, Ji Hyun ; Baca, A. G. ; Allerman, A. A. ; Sanchez, C. / Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors. ECS Transactions. Vol. 61 4. ed. Electrochemical Society Inc., 2014. pp. 179-185
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abstract = "The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5{\%} and the sheet resistance increased 9.2{\%} after irradiation with a dose of 2×10 14 1/cm 2. Threshold voltage shifted more positively with a dose of 2×10 14 1/cm 2 compared to 2×10 13 /cm 2. Besides, the breakdown voltage improved 39.8{\%} after irradiation with dose of 2×10 14 1/cm 2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.",
author = "Xi, {Y. Y.} and Hwang, {Y. H.} and Hsieh, {Y. L.} and S. Li and F. Ren and Pearton, {S. J.} and E. Patrick and Law, {M. E.} and G. Yang and Kim, {H. Y.} and Kim, {Ji Hyun} and Baca, {A. G.} and Allerman, {A. A.} and C. Sanchez",
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AU - Xi, Y. Y.

AU - Hwang, Y. H.

AU - Hsieh, Y. L.

AU - Li, S.

AU - Ren, F.

AU - Pearton, S. J.

AU - Patrick, E.

AU - Law, M. E.

AU - Yang, G.

AU - Kim, H. Y.

AU - Kim, Ji Hyun

AU - Baca, A. G.

AU - Allerman, A. A.

AU - Sanchez, C.

PY - 2014

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AB - The effect of 5 MeV proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors were investigated. The drain saturation current (IDSS) reduced 12.5% and the sheet resistance increased 9.2% after irradiation with a dose of 2×10 14 1/cm 2. Threshold voltage shifted more positively with a dose of 2×10 14 1/cm 2 compared to 2×10 13 /cm 2. Besides, the breakdown voltage improved 39.8% after irradiation with dose of 2×10 14 1/cm 2. Simulation was done and the peak electric field at the drain side of the gate edge was found to be reduced after irradiation. The defects generated after irradiation at the AlGaN/GaN interface create a virtual gate and thus reduce the electric field. Gate lag measurement was performed to characterize the defects. The current dispersion of DC to high frequency indicates the defects had been generated after irradiation, which is in agreement with the simulation data.

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