Effect of pseudomorphic multiple quantum well layers on characteristics of uncooled electroluminescent diode

Jae Ho Han, Zail Lhee, Sung Woong Park

Research output: Contribution to journalArticle

Abstract

We have fabricated and characterized the uncooled light emitting device having a pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively strained quantum well layers on the semiconductor diode laser characteristics was experimentally demonstrated, depending on room and high temperatures. In addition to the automatically embedded absorptive grating which can reduce the epitaxial growth step, the laser performance can be optimized for both threshold current and differential slope efficiency when the quantum well numbers are reduced to five layers for optical communication systems.

Original languageEnglish
Pages (from-to)5859-5865
Number of pages7
JournalInternational Journal of Modern Physics B
Volume23
Issue number32
DOIs
Publication statusPublished - 2009 Dec 30
Externally publishedYes

Keywords

  • Distributed feedback lasers
  • Quantum well lasers
  • Semiconductor lasers

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Statistical and Nonlinear Physics

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