Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song; Cheong Hyun Roh; Hong Goo Choi; Min Woo Ha; Cheol Koo Hahn; Jung Ho Park; Jun Ho Lee

doi:10.1016/j.apsusc.2011.04.115

Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min Woo Ha, Cheol Koo Hahn, Jung Ho Park, Jun Ho Lee

School of Electrical Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt ^D.B and Ti ^D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt ^D.B and Ti ^D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

Original language	English
Pages (from-to)	8102-8105
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	18
DOIs	https://doi.org/10.1016/j.apsusc.2011.04.115
Publication status	Published - 2011 Jul 1

Keywords

Flip-chip (FC)
GaN
Reflectance
Silver (Ag)
Specific contact resistivity
Surface morphology
p-Ohmic contact

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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Song, H. J., Roh, C. H., Choi, H. G., Ha, M. W., Hahn, C. K., Park, J. H., & Lee, J. H. (2011). Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs. Applied Surface Science, 257(18), 8102-8105. https://doi.org/10.1016/j.apsusc.2011.04.115

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title = "Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs",

abstract = " In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt D.B and Ti D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt D.B and Ti D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.",

keywords = "Flip-chip (FC), GaN, Reflectance, Silver (Ag), Specific contact resistivity, Surface morphology, p-Ohmic contact",

author = "Song, {Hong Joo} and Roh, {Cheong Hyun} and Choi, {Hong Goo} and Ha, {Min Woo} and Hahn, {Cheol Koo} and Park, {Jung Ho} and Lee, {Jun Ho}",

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T1 - Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

AU - Song, Hong Joo

AU - Roh, Cheong Hyun

AU - Choi, Hong Goo

AU - Ha, Min Woo

AU - Hahn, Cheol Koo

AU - Park, Jung Ho

AU - Lee, Jun Ho

PY - 2011/7/1

Y1 - 2011/7/1

N2 - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt D.B and Ti D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt D.B and Ti D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

AB - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt D.B and Ti D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt D.B and Ti D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

KW - Flip-chip (FC)

KW - GaN

KW - Reflectance

KW - Silver (Ag)

KW - Specific contact resistivity

KW - Surface morphology

KW - p-Ohmic contact

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