Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min Woo Ha, Cheol Koo Hahn, Jung ho Park, Jun Ho Lee

Research output: Contribution to journalArticle

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Abstract

In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

Original languageEnglish
Pages (from-to)8102-8105
Number of pages4
JournalApplied Surface Science
Volume257
Issue number18
DOIs
Publication statusPublished - 2011 Jul 1

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Diffusion barriers
Ohmic contacts
Light emitting diodes
Microscopic examination
Metals
Spectroscopy
Ions
Scanning
Lasers

ASJC Scopus subject areas

  • Surfaces, Coatings and Films

Cite this

Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs. / Song, Hong Joo; Roh, Cheong Hyun; Choi, Hong Goo; Ha, Min Woo; Hahn, Cheol Koo; Park, Jung ho; Lee, Jun Ho.

In: Applied Surface Science, Vol. 257, No. 18, 01.07.2011, p. 8102-8105.

Research output: Contribution to journalArticle

Song, Hong Joo ; Roh, Cheong Hyun ; Choi, Hong Goo ; Ha, Min Woo ; Hahn, Cheol Koo ; Park, Jung ho ; Lee, Jun Ho. / Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs. In: Applied Surface Science. 2011 ; Vol. 257, No. 18. pp. 8102-8105.
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AU - Song, Hong Joo

AU - Roh, Cheong Hyun

AU - Choi, Hong Goo

AU - Ha, Min Woo

AU - Hahn, Cheol Koo

AU - Park, Jung ho

AU - Lee, Jun Ho

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KW - Specific contact resistivity

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