Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song; Cheong Hyun Roh; Hong Goo Choi; Min Woo Ha; Cheol Koo Hahn; Jung ho Park; Jun Ho Lee

doi:10.1016/j.apsusc.2011.04.115

Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min Woo Ha, Cheol Koo Hahn, Jung ho Park, Jun Ho Lee

School of Electrical Engineering

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt^D.B and Ti^D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt^D.B and Ti^D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

Original language	English
Pages (from-to)	8102-8105
Number of pages	4
Journal	Applied Surface Science
Volume	257
Issue number	18
DOIs	https://doi.org/10.1016/j.apsusc.2011.04.115
Publication status	Published - 2011 Jul 1

Fingerprint

ASJC Scopus subject areas

Surfaces, Coatings and Films

Cite this

Song, H. J., Roh, C. H., Choi, H. G., Ha, M. W., Hahn, C. K., Park, J. H., & Lee, J. H. (2011). Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs. Applied Surface Science, 257(18), 8102-8105. https://doi.org/10.1016/j.apsusc.2011.04.115

@article{37331928dad84df8b28c6a7230495d9e,

title = "Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs",

abstract = "In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.",

keywords = "Flip-chip (FC), GaN, p-Ohmic contact, Reflectance, Silver (Ag), Specific contact resistivity, Surface morphology",

author = "Song, {Hong Joo} and Roh, {Cheong Hyun} and Choi, {Hong Goo} and Ha, {Min Woo} and Hahn, {Cheol Koo} and Park, {Jung ho} and Lee, {Jun Ho}",

year = "2011",

month = jul

day = "1",

doi = "10.1016/j.apsusc.2011.04.115",

language = "English",

volume = "257",

pages = "8102--8105",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

number = "18",

}

TY - JOUR

T1 - Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

AU - Song, Hong Joo

AU - Roh, Cheong Hyun

AU - Choi, Hong Goo

AU - Ha, Min Woo

AU - Hahn, Cheol Koo

AU - Park, Jung ho

AU - Lee, Jun Ho

PY - 2011/7/1

Y1 - 2011/7/1

N2 - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

AB - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

KW - Flip-chip (FC)

KW - GaN

KW - p-Ohmic contact

KW - Reflectance

KW - Silver (Ag)

KW - Specific contact resistivity

KW - Surface morphology

UR - http://www.scopus.com/inward/record.url?scp=79957908247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957908247&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2011.04.115

DO - 10.1016/j.apsusc.2011.04.115

M3 - Article

AN - SCOPUS:79957908247

VL - 257

SP - 8102

EP - 8105

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 18

ER -

Access to Document

10.1016/j.apsusc.2011.04.115