Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs

Hong Joo Song, Cheong Hyun Roh, Hong Goo Choi, Min Woo Ha, Cheol Koo Hahn, Jung Ho Park, Jun Ho Lee

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on Pt D.B and Ti D.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of Pt D.B and Ti D.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.

Original languageEnglish
Pages (from-to)8102-8105
Number of pages4
JournalApplied Surface Science
Volume257
Issue number18
DOIs
Publication statusPublished - 2011 Jul 1

Keywords

  • Flip-chip (FC)
  • GaN
  • Reflectance
  • Silver (Ag)
  • Specific contact resistivity
  • Surface morphology
  • p-Ohmic contact

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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