Abstract
In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.
| Original language | English |
|---|---|
| Pages (from-to) | 8102-8105 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 257 |
| Issue number | 18 |
| DOIs | |
| Publication status | Published - 2011 Jul 1 |
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ASJC Scopus subject areas
- Surfaces, Coatings and Films
Cite this
Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs. / Song, Hong Joo; Roh, Cheong Hyun; Choi, Hong Goo; Ha, Min Woo; Hahn, Cheol Koo; Park, Jung ho; Lee, Jun Ho.
In: Applied Surface Science, Vol. 257, No. 18, 01.07.2011, p. 8102-8105.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of Pt and Ti on Ni/Ag/(Pt or Ti)/Au p-ohmic contacts of GaN based flip-chip LEDs
AU - Song, Hong Joo
AU - Roh, Cheong Hyun
AU - Choi, Hong Goo
AU - Ha, Min Woo
AU - Hahn, Cheol Koo
AU - Park, Jung ho
AU - Lee, Jun Ho
PY - 2011/7/1
Y1 - 2011/7/1
N2 - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.
AB - In this paper, we report the dependence of Ni/Ag/diffusion barrier (D.B)/Au p-ohmic contact on PtD.B and TiD.B for GaN based flip-chip light emitting diodes (FC LEDs). It is shown that D.B metals have strongly influenced on the reflectance and contact resistivity of contacts. We present these results are caused by the variation of the morphology and atomic distribution due to D.Bs. The roles of PtD.B and TiD.B on Ni/Ag/D.B/Au p-GaN ohmic contacts are analyzed using the confocal laser scanning microscopy (CLSM) measurement and the secondary ion mass spectroscopy (SIMS) profiles in details.
KW - Flip-chip (FC)
KW - GaN
KW - p-Ohmic contact
KW - Reflectance
KW - Silver (Ag)
KW - Specific contact resistivity
KW - Surface morphology
UR - http://www.scopus.com/inward/record.url?scp=79957908247&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79957908247&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2011.04.115
DO - 10.1016/j.apsusc.2011.04.115
M3 - Article
AN - SCOPUS:79957908247
VL - 257
SP - 8102
EP - 8105
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 18
ER -