Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN

Ji Hoon Kim, Jung ho Park, Sung Min Hwang, Kwang Hyeon Baik

Research output: Contribution to journalArticle

Abstract

We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2° ~ +0.4°. Samples grown by using -0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4° off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2° ~ +0.2° to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN.

Original languageEnglish
Pages (from-to)1649-1655
Number of pages7
JournalJournal of the Korean Physical Society
Volume60
Issue number10
DOIs
Publication statusPublished - 2012 May 1

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Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN. / Kim, Ji Hoon; Park, Jung ho; Hwang, Sung Min; Baik, Kwang Hyeon.

In: Journal of the Korean Physical Society, Vol. 60, No. 10, 01.05.2012, p. 1649-1655.

Research output: Contribution to journalArticle

@article{d70726fa8ae64343bff163439874cf22,
title = "Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN",
abstract = "We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2° ~ +0.4°. Samples grown by using -0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4° off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2° ~ +0.2° to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN.",
keywords = "a-plane GaN, Metal Organic Chemical Vapor Deposition, Nonpolar, Off-cut angle, Strain",
author = "Kim, {Ji Hoon} and Park, {Jung ho} and Hwang, {Sung Min} and Baik, {Kwang Hyeon}",
year = "2012",
month = "5",
day = "1",
doi = "10.3938/jkps.60.1649",
language = "English",
volume = "60",
pages = "1649--1655",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "10",

}

TY - JOUR

T1 - Effect of r-plane (1-102) sapphire off-cut angle on the anisotropic strain in nonpolar Si-doped a-plane (11-20) GaN

AU - Kim, Ji Hoon

AU - Park, Jung ho

AU - Hwang, Sung Min

AU - Baik, Kwang Hyeon

PY - 2012/5/1

Y1 - 2012/5/1

N2 - We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2° ~ +0.4°. Samples grown by using -0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4° off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2° ~ +0.2° to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN.

AB - We studied the growth and the characteristics of nonpolar Si-doped a-plane GaN grown on r-plane sapphire substrates with different off-cut angles which were changed in the range of -0.2° ~ +0.4°. Samples grown by using -0.2° and +0.2° off-cut angles showed triangular pit-free and smooth surfaces, which resulted from enhanced lateral growth owing to the epitaxial films having a Ga face. On the other hand, the sample grown by using +0.4° off-cut angles revealed a high density of pits and low crystalline quality due to a high density of dislocations. The strain determined by using calculations with the lattice parameters also showed a dependence on the off-cut angles. We expect r-plane sapphire with off-cut angles in the range of -0.2° ~ +0.2° to be very effective for improving the crystalline quality and the surface morphology of a-plane GaN.

KW - a-plane GaN

KW - Metal Organic Chemical Vapor Deposition

KW - Nonpolar

KW - Off-cut angle

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=84863609767&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863609767&partnerID=8YFLogxK

U2 - 10.3938/jkps.60.1649

DO - 10.3938/jkps.60.1649

M3 - Article

AN - SCOPUS:84863609767

VL - 60

SP - 1649

EP - 1655

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 10

ER -