Effect of radio-frequency electric power applied to a boron nitride unbalanced magnetron sputter target on the deposition of cubic boron nitride thin film

Ji Sun Ko, Jong Keuk Park, Wook Seong Lee, Joo Youl Huh, Young Joon Baik

Research output: Contribution to journalArticle


Cubic boron nitride (c-BN) films were deposited by an unbalanced magnetron sputtering method. A (100) Si wafer with a nanocrystalline diamond thin film as a surface coating layer or that without it was used as a substrate. The target power was varied from 100 to 400 W. A boron nitride target was used, which was connected to a radio frequency power supply. High frequency power connected to a substrate holder was used for self-biasing. The deposition pressure was 0.27 MPa with a flow of Ar (18 sccm) - N2 (2 sccm) mixed gas. The existence of threshold bias voltages for c-BN formation and resputtering were observed irrespective of target power. The bias voltage window for c-BN formation broadened with increased target power. The deposition rate decreased with enhanced bias voltage and decreased target power. Residual stresses of the films did not vary noticeably with target power within the target power range of c-BN formation. A parameter space for c-BN formation according to the target power and the bias voltage, as two variables, was suggested.

Original languageEnglish
Pages (from-to)1317-1321
Number of pages5
JournalMetals and Materials International
Issue number6
Publication statusPublished - 2013 Nov 1



  • crystal structure
  • cubic boron nitride
  • Fourier transformed infrared spectroscopy
  • residual stress
  • sputtering

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Metals and Alloys
  • Mechanics of Materials
  • Materials Chemistry

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