Effect of rapid thermal annealing on Al doped n-ZnO films grown by RF-magnetron sputtering

Kyoung Kook Kim, Hitoshi Tampo, June O. Song, Tae Yeon Seong, Seong Ju Park, Ji Myon Lee, Sang Woo Kim, Shizuo Fujita, Shigeru Niki

Research output: Contribution to journalArticlepeer-review

60 Citations (Scopus)


High-quality Al-doped n-type ZnO (n-ZnO:Al) epilayers have been grown by an rf-magnetron sputtering technique combined with a rapid thermal annealing (RTA) process. The electrical and optical properties of as-deposited samples are considerably improved upon annealing at 900°C for 3 min in nitrogen ambient. The improvement is attributed to the deoxidation of Al-oxides, i.e., the activation of Al dopants. The samples annealed at 900°C produce a mobility of 65.5 cm2/V·s and a carrier concentration of 1.03 × 1020 cm-3. It is also shown that the sample surface becomes significantly smoother after annealing. The results show that the RTA process effectively improves the electrical and optical properties of the Al-doped ZnO films.

Original languageEnglish
Pages (from-to)4776-4779
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number7 A
Publication statusPublished - 2005 Jul 8
Externally publishedYes


  • Dopant activation
  • Hall measurements
  • N-type Zno
  • Photoluminescence
  • Rapid thermal annealing

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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