Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is

Original languageEnglish
Pages (from-to)12008-12010
Number of pages3
JournalChemical Communications
Volume48
Issue number98
DOIs
Publication statusPublished - 2012 Nov 30

Fingerprint

Oxidation-Reduction
Proteins
Data storage equipment
Flash memory
Equipment and Supplies
Heme
Organic field effect transistors
Redox reactions
Durability

ASJC Scopus subject areas

  • Metals and Alloys
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Catalysis
  • Chemistry(all)

Cite this

Effect of redox proteins on the behavior of non-volatile memory. / Lee, Ji Hyun; Yew, Seung Chul; Cho, Jinhan; Kim, Youn Sang.

In: Chemical Communications, Vol. 48, No. 98, 30.11.2012, p. 12008-12010.

Research output: Contribution to journalArticle

Lee, Ji Hyun ; Yew, Seung Chul ; Cho, Jinhan ; Kim, Youn Sang. / Effect of redox proteins on the behavior of non-volatile memory. In: Chemical Communications. 2012 ; Vol. 48, No. 98. pp. 12008-12010.
@article{1526e100662341d7b6acd9ca1009fa25,
title = "Effect of redox proteins on the behavior of non-volatile memory",
abstract = "We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is",
author = "Lee, {Ji Hyun} and Yew, {Seung Chul} and Jinhan Cho and Kim, {Youn Sang}",
year = "2012",
month = "11",
day = "30",
doi = "10.1039/c2cc35959f",
language = "English",
volume = "48",
pages = "12008--12010",
journal = "Chemical Communications",
issn = "1359-7345",
publisher = "Royal Society of Chemistry",
number = "98",

}

TY - JOUR

T1 - Effect of redox proteins on the behavior of non-volatile memory

AU - Lee, Ji Hyun

AU - Yew, Seung Chul

AU - Cho, Jinhan

AU - Kim, Youn Sang

PY - 2012/11/30

Y1 - 2012/11/30

N2 - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is

AB - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is

UR - http://www.scopus.com/inward/record.url?scp=84870013260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870013260&partnerID=8YFLogxK

U2 - 10.1039/c2cc35959f

DO - 10.1039/c2cc35959f

M3 - Article

VL - 48

SP - 12008

EP - 12010

JO - Chemical Communications

JF - Chemical Communications

SN - 1359-7345

IS - 98

ER -