Abstract
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).
Original language | English |
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Pages (from-to) | 12008-12010 |
Number of pages | 3 |
Journal | Chemical Communications |
Volume | 48 |
Issue number | 98 |
DOIs | |
Publication status | Published - 2012 Nov 14 |
ASJC Scopus subject areas
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry