Abstract
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is
| Original language | English |
|---|---|
| Pages (from-to) | 12008-12010 |
| Number of pages | 3 |
| Journal | Chemical Communications |
| Volume | 48 |
| Issue number | 98 |
| DOIs | |
| Publication status | Published - 2012 Nov 30 |
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ASJC Scopus subject areas
- Metals and Alloys
- Materials Chemistry
- Surfaces, Coatings and Films
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Catalysis
- Chemistry(all)
Cite this
Effect of redox proteins on the behavior of non-volatile memory. / Lee, Ji Hyun; Yew, Seung Chul; Cho, Jinhan; Kim, Youn Sang.
In: Chemical Communications, Vol. 48, No. 98, 30.11.2012, p. 12008-12010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of redox proteins on the behavior of non-volatile memory
AU - Lee, Ji Hyun
AU - Yew, Seung Chul
AU - Cho, Jinhan
AU - Kim, Youn Sang
PY - 2012/11/30
Y1 - 2012/11/30
N2 - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is
AB - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is
UR - http://www.scopus.com/inward/record.url?scp=84870013260&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870013260&partnerID=8YFLogxK
U2 - 10.1039/c2cc35959f
DO - 10.1039/c2cc35959f
M3 - Article
VL - 48
SP - 12008
EP - 12010
JO - Chemical Communications
JF - Chemical Communications
SN - 1359-7345
IS - 98
ER -