Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee; Seung Chul Yew; Jinhan Cho; Youn Sang Kim

doi:10.1039/c2cc35959f

Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Original language	English
Pages (from-to)	12008-12010
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	98
DOIs	https://doi.org/10.1039/c2cc35959f
Publication status	Published - 2012 Nov 14

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1039/c2cc35959f

Cite this

@article{1526e100662341d7b6acd9ca1009fa25,

title = "Effect of redox proteins on the behavior of non-volatile memory",

abstract = "We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).",

author = "Lee, {Ji Hyun} and Yew, {Seung Chul} and Jinhan Cho and Kim, {Youn Sang}",

year = "2012",

month = nov,

day = "14",

doi = "10.1039/c2cc35959f",

language = "English",

volume = "48",

pages = "12008--12010",

journal = "Chemical Communications",

issn = "1359-7345",

publisher = "Royal Society of Chemistry",

number = "98",

}

TY - JOUR

T1 - Effect of redox proteins on the behavior of non-volatile memory

AU - Lee, Ji Hyun

AU - Yew, Seung Chul

AU - Cho, Jinhan

AU - Kim, Youn Sang

PY - 2012/11/14

Y1 - 2012/11/14

N2 - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

AB - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

UR - http://www.scopus.com/inward/record.url?scp=84870013260&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870013260&partnerID=8YFLogxK

U2 - 10.1039/c2cc35959f

DO - 10.1039/c2cc35959f

M3 - Article

C2 - 23128524

AN - SCOPUS:84870013260

VL - 48

SP - 12008

EP - 12010

JO - Chemical Communications

JF - Chemical Communications

SN - 1359-7345

IS - 98

ER -

Effect of redox proteins on the behavior of non-volatile memory

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this