Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee; Seung Chul Yew; Jinhan Cho; Youn Sang Kim

doi:10.1039/c2cc35959f

Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Original language	English
Pages (from-to)	12008-12010
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	98
DOIs	https://doi.org/10.1039/c2cc35959f
Publication status	Published - 2012 Nov 14

ASJC Scopus subject areas

Catalysis
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Chemistry(all)
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Effect of redox proteins on the behavior of non-volatile memory",

abstract = "We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).",

author = "Lee, {Ji Hyun} and Yew, {Seung Chul} and Jinhan Cho and Kim, {Youn Sang}",

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AU - Cho, Jinhan

AU - Kim, Youn Sang

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Y1 - 2012/11/14

N2 - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

AB - We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

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Effect of redox proteins on the behavior of non-volatile memory

Abstract

ASJC Scopus subject areas

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