Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee; Seung Chul Yew; Jinhan Cho; Youn Sang Kim

doi:10.1039/c2cc35959f

Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles). This journal is

Original language	English
Pages (from-to)	12008-12010
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	98
DOIs	https://doi.org/10.1039/c2cc35959f
Publication status	Published - 2012 Nov 30

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ASJC Scopus subject areas

Metals and Alloys
Materials Chemistry
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Catalysis
Chemistry(all)

Cite this

Lee, J. H., Yew, S. C., Cho, J., & Kim, Y. S. (2012). Effect of redox proteins on the behavior of non-volatile memory. Chemical Communications, 48(98), 12008-12010. https://doi.org/10.1039/c2cc35959f

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Access to Document

10.1039/c2cc35959f