Effect of redox proteins on the behavior of non-volatile memory

Ji Hyun Lee, Seung Chul Yew, Jinhan Cho, Youn Sang Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Original languageEnglish
Pages (from-to)12008-12010
Number of pages3
JournalChemical Communications
Volume48
Issue number98
DOIs
Publication statusPublished - 2012 Nov 14

ASJC Scopus subject areas

  • Catalysis
  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Chemistry(all)
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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