Abstract
We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).
| Original language | English |
|---|---|
| Pages (from-to) | 12008-12010 |
| Number of pages | 3 |
| Journal | Chemical Communications |
| Volume | 48 |
| Issue number | 98 |
| DOIs | |
| Publication status | Published - 2012 Nov 14 |
ASJC Scopus subject areas
- Catalysis
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Chemistry(all)
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Cite this
Lee, J. H., Yew, S. C., Cho, J., & Kim, Y. S. (2012). Effect of redox proteins on the behavior of non-volatile memory. Chemical Communications, 48(98), 12008-12010. https://doi.org/10.1039/c2cc35959f