Abstract
Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for nitridation and GaN-buffer growth on Al 2O 3(0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN-buffer layer deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on modified surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar |
| Publisher | Materials Research Society |
| Pages | 59-65 |
| Number of pages | 7 |
| Volume | 449 |
| Publication status | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: 1996 Dec 2 → 1996 Dec 6 |
Other
| Other | Proceedings of the 1996 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 96/12/2 → 96/12/6 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Effect of sapphire nitridation on GaN by MOCVD. / Byun, Dong Jin; Jeong, J.; Lee, J. I.; Kim, B.; Yoo, J. B.; Kum, D. W.
Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 59-65.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Effect of sapphire nitridation on GaN by MOCVD
AU - Byun, Dong Jin
AU - Jeong, J.
AU - Lee, J. I.
AU - Kim, B.
AU - Yoo, J. B.
AU - Kum, D. W.
PY - 1997
Y1 - 1997
N2 - Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for nitridation and GaN-buffer growth on Al 2O 3(0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN-buffer layer deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on modified surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.
AB - Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for nitridation and GaN-buffer growth on Al 2O 3(0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN-buffer layer deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on modified surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.
UR - http://www.scopus.com/inward/record.url?scp=0030651746&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030651746&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0030651746
VL - 449
SP - 59
EP - 65
BT - Materials Research Society Symposium - Proceedings
A2 - Ponce, F.A.
A2 - Moustakas, T.D.
A2 - Akasaki, I.
A2 - Monemar, B.A.
PB - Materials Research Society
ER -