Effect of sapphire nitridation on GaN by MOCVD

Dong Jin Byun, J. Jeong, J. I. Lee, B. Kim, J. B. Yoo, D. W. Kum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Efficiency and lifetime of light emitting diodes and laser diodes inversely depend on defect density of the crystal. Reduction of defect density is accomplished by proper choice of the substrate or deliberate modification of substrate surface. Roughness of substrate surface for GaN deposition can be controlled by buffer growth and/or nitridation. Buffer layers or nitrided layers promote lateral growth of films due to decrease in interfacial free energy between the film and substrate. Optimum conditions for nitridation and GaN-buffer growth on Al 2O 3(0001) were determined by means of atomic force microscopy (AFM). AFM analysis of nitridated sapphire surfaces was also carried out to find the optimum condition for nitridation of sapphire substrate before GaN-buffer layer deposition. Nitridation of sapphires was performed only with nitrogen. Based on the fact that GaN deposited on modified surface exhibited the better crystal quality and optical property, use of AFM roughness as a reliable criterion is suggested for process optimization of GaN film growth by metallorganic chemical vapor deposition.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsF.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
PublisherMaterials Research Society
Pages59-65
Number of pages7
Volume449
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1996 MRS Fall Symposium - Boston, MA, USA
Duration: 1996 Dec 21996 Dec 6

Other

OtherProceedings of the 1996 MRS Fall Symposium
CityBoston, MA, USA
Period96/12/296/12/6

Fingerprint

Nitridation
Aluminum Oxide
Metallorganic chemical vapor deposition
Sapphire
Substrates
Atomic force microscopy
Defect density
Buffer layers
Buffers
Surface roughness
Crystals
Film growth
Free energy
Light emitting diodes
Semiconductor lasers
Nitrogen
Optical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Byun, D. J., Jeong, J., Lee, J. I., Kim, B., Yoo, J. B., & Kum, D. W. (1997). Effect of sapphire nitridation on GaN by MOCVD. In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 59-65). Materials Research Society.

Effect of sapphire nitridation on GaN by MOCVD. / Byun, Dong Jin; Jeong, J.; Lee, J. I.; Kim, B.; Yoo, J. B.; Kum, D. W.

Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 59-65.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Byun, DJ, Jeong, J, Lee, JI, Kim, B, Yoo, JB & Kum, DW 1997, Effect of sapphire nitridation on GaN by MOCVD. in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 59-65, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 96/12/2.
Byun DJ, Jeong J, Lee JI, Kim B, Yoo JB, Kum DW. Effect of sapphire nitridation on GaN by MOCVD. In Ponce FA, Moustakas TD, Akasaki I, Monemar BA, editors, Materials Research Society Symposium - Proceedings. Vol. 449. Materials Research Society. 1997. p. 59-65
Byun, Dong Jin ; Jeong, J. ; Lee, J. I. ; Kim, B. ; Yoo, J. B. ; Kum, D. W. / Effect of sapphire nitridation on GaN by MOCVD. Materials Research Society Symposium - Proceedings. editor / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. Vol. 449 Materials Research Society, 1997. pp. 59-65
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