Effect of Sb doping on the opto-electronic properties of SnO 2 nanowires

Yoon Chul Kim, Chang Hoon Yoon, Jaehyun Park, Jangyeol Yoon, Noh Soo Han, Jae Kyu Song, Seung Min Park, Jeong Sook Ha

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Antimony (Sb) doping of SnO 2 nanowires (NWs) was investigated for its optical and electrical effects. The low-temperature photoluminescence spectra of SnO 2 NWs varied significantly with increasing Sb content, where the temperature-dependence of the visible emission at ca. 400 nm was distinctive with Sb-doping, indicating different defect states, such as neutral and positively charged oxygen vacancies. Field effect transistors (FETs) with low-level Sb-doped SnO 2 NW channels exhibited higher mobility, charge concentration, and faster response and recovery to UV light than intrinsic SnO 2 NW FETs.

Original languageEnglish
Pages (from-to)6471-6475
Number of pages5
JournalThin Solid Films
Volume520
Issue number21
DOIs
Publication statusPublished - 2012 Aug 31

Keywords

  • Antimony doping
  • Defect state
  • Field effect mobility
  • Photoluminescence
  • Tin oxide nanowires
  • UV sensing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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  • Cite this

    Kim, Y. C., Yoon, C. H., Park, J., Yoon, J., Han, N. S., Song, J. K., Park, S. M., & Ha, J. S. (2012). Effect of Sb doping on the opto-electronic properties of SnO 2 nanowires. Thin Solid Films, 520(21), 6471-6475. https://doi.org/10.1016/j.tsf.2012.07.001