Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

Taehee Yoo, Dongyun Shin, Jungtaek Kim, Hyungchan Kim, Sang Hoon Lee, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

Original languageEnglish
Article number07D119
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008 Apr 21

Fingerprint

magnetization
anisotropy
Hall resistance
ferromagnetic films
Hall effect

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors. / Yoo, Taehee; Shin, Dongyun; Kim, Jungtaek; Kim, Hyungchan; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 103, No. 7, 07D119, 21.04.2008.

Research output: Contribution to journalArticle

Yoo, Taehee ; Shin, Dongyun ; Kim, Jungtaek ; Kim, Hyungchan ; Lee, Sang Hoon ; Liu, X. ; Furdyna, J. K. / Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 7.
@article{ac66ae8b60c047e687a1708f2b6814d7,
title = "Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors",
abstract = "We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.",
author = "Taehee Yoo and Dongyun Shin and Jungtaek Kim and Hyungchan Kim and Lee, {Sang Hoon} and X. Liu and Furdyna, {J. K.}",
year = "2008",
month = "4",
day = "21",
doi = "10.1063/1.2830686",
language = "English",
volume = "103",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

AU - Yoo, Taehee

AU - Shin, Dongyun

AU - Kim, Jungtaek

AU - Kim, Hyungchan

AU - Lee, Sang Hoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2008/4/21

Y1 - 2008/4/21

N2 - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

AB - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

UR - http://www.scopus.com/inward/record.url?scp=42149098802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149098802&partnerID=8YFLogxK

U2 - 10.1063/1.2830686

DO - 10.1063/1.2830686

M3 - Article

AN - SCOPUS:42149098802

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07D119

ER -