Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

Taehee Yoo; Dongyun Shin; Jungtaek Kim; Hyungchan Kim; Sanghoon Lee; X. Liu; J. K. Furdyna

doi:10.1063/1.2830686

Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

Taehee Yoo, Dongyun Shin, Jungtaek Kim, Hyungchan Kim, Sanghoon Lee, X. Liu, J. K. Furdyna

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

Original language	English
Article number	07D119
Journal	Journal of Applied Physics
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.2830686
Publication status	Published - 2008

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{ac66ae8b60c047e687a1708f2b6814d7,

title = "Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors",

abstract = "We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.",

author = "Taehee Yoo and Dongyun Shin and Jungtaek Kim and Hyungchan Kim and Sanghoon Lee and X. Liu and Furdyna, {J. K.}",

year = "2008",

doi = "10.1063/1.2830686",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors

AU - Yoo, Taehee

AU - Shin, Dongyun

AU - Kim, Jungtaek

AU - Kim, Hyungchan

AU - Lee, Sanghoon

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2008

Y1 - 2008

N2 - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

AB - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.

UR - http://www.scopus.com/inward/record.url?scp=42149098802&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42149098802&partnerID=8YFLogxK

U2 - 10.1063/1.2830686

DO - 10.1063/1.2830686

M3 - Article

AN - SCOPUS:42149098802

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07D119

ER -