Abstract
We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.
| Original language | English |
|---|---|
| Article number | 07D119 |
| Journal | Journal of Applied Physics |
| Volume | 103 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2008 Apr 21 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors. / Yoo, Taehee; Shin, Dongyun; Kim, Jungtaek; Kim, Hyungchan; Lee, Sang Hoon; Liu, X.; Furdyna, J. K.
In: Journal of Applied Physics, Vol. 103, No. 7, 07D119, 21.04.2008.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Effect of shape anisotropy on the magnetization reversal process of (Ga,Mn)As ferromagnetic semiconductors
AU - Yoo, Taehee
AU - Shin, Dongyun
AU - Kim, Jungtaek
AU - Kim, Hyungchan
AU - Lee, Sang Hoon
AU - Liu, X.
AU - Furdyna, J. K.
PY - 2008/4/21
Y1 - 2008/4/21
N2 - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.
AB - We have carried out the planar Hall effect measurement on two different sizes of Hall bar devices fabricated from GaMnAs ferromagnetic films. The detailed information on the magnetic anisotropy properties including the shape anisotropy field were obtained from the angular dependence of planar Hall resistance. The shape anisotropy field per magnetization in the device with 10 μm channel width was about 39 G. Though the value of shape anisotropy is small, it affects the magnetization reversal processes of the 10 μm Hall device by showing steplike feature in the angular dependence of switching fields.
UR - http://www.scopus.com/inward/record.url?scp=42149098802&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42149098802&partnerID=8YFLogxK
U2 - 10.1063/1.2830686
DO - 10.1063/1.2830686
M3 - Article
AN - SCOPUS:42149098802
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
M1 - 07D119
ER -