Effect of Si doping on epitaxial lateral overgrowth of GaN: A spatially resolved micro-Raman scattering study

Hanul Kim, Heesuk Rho, Lee Woon Jang, In-Hwan Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report spatially resolved Raman scattering from Si-doped epitaxial laterally overgrown GaN structures to investigate spatial variations in stress and free electron concentration. The doping-induced increase in the free electron concentration is relatively higher in the laterally overgrown regions than in the coherently grown regions due to the increased contribution of the high-energy A 1 longitudinal optical phonon-plasmon coupled mode. In addition, the E 2(high) [E 2(low)] phonon energy shifts downward (upward) more significantly in the laterally overgrown regions than in the coherently grown regions. The doping-induced Raman shifts of the E 2(high) and E 2(low) phonons in the laterally overgrown regions are approximately -0.6 and 0.11 cm -1, respectively, corresponding to the in-plane stress of ∼0.22 GPa.

Original languageEnglish
Pages (from-to)267-270
Number of pages4
JournalCurrent Applied Physics
Volume13
Issue number1
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Fingerprint

free electrons
Raman scattering
Doping (additives)
Raman spectra
plane stress
Electrons
shift
Phonons
coupled modes
phonons
energy
electrons

Keywords

  • GaN
  • Optical phonons
  • Raman scattering

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Effect of Si doping on epitaxial lateral overgrowth of GaN : A spatially resolved micro-Raman scattering study. / Kim, Hanul; Rho, Heesuk; Jang, Lee Woon; Lee, In-Hwan.

In: Current Applied Physics, Vol. 13, No. 1, 01.01.2013, p. 267-270.

Research output: Contribution to journalArticle

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