Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

Ji Hoon Kim, Sung Min Hwang, Yong Gon Seo, Doo Soo Kim, Kwang Hyeon Baik, Jung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

Original languageEnglish
Title of host publicationTwelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting
DOIs
Publication statusPublished - 2012
Event12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting - San Diego, CA, United States
Duration: 2012 Aug 132012 Aug 16

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8484
ISSN (Print)0277-786X

Other

Other12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting
CountryUnited States
CitySan Diego, CA
Period12/8/1312/8/16

Keywords

  • A-plane gan
  • Metal-organic chemical vapor deposition
  • Nitrides
  • Nonpolar
  • Transfer length method
  • Transmission electron microscopy
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Kim, J. H., Hwang, S. M., Seo, Y. G., Kim, D. S., Baik, K. H., & Park, J. H. (2012). Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. In Twelfth International Conference on Solid State Lighting and Fourth International Conference on White LEDs and Solid State Lighting [84840H] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8484). https://doi.org/10.1117/12.929523