Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

Ji Hoon Kim, Sung Min Hwang, Yong Gon Seo, Doo Soo Kim, Kwang Hyeon Baik, Jung ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8484
DOIs
Publication statusPublished - 2012 Dec 1
Event12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting - San Diego, CA, United States
Duration: 2012 Aug 132012 Aug 16

Other

Other12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting
CountryUnited States
CitySan Diego, CA
Period12/8/1312/8/16

Fingerprint

Gallium nitride
Nitrides
gallium nitrides
Electrical Properties
Stacking faults
Structural Properties
Structural properties
interlayers
Electric properties
Anisotropy
electrical properties
Organic Chemicals
crystal defects
Aluminum Oxide
Sheet resistance
Organic chemicals
Full width at half maximum
Dislocation
Dislocations (crystals)
Sapphire

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Kim, J. H., Hwang, S. M., Seo, Y. G., Kim, D. S., Baik, K. H., & Park, J. H. (2012). Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8484). [84840H] https://doi.org/10.1117/12.929523

Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. / Kim, Ji Hoon; Hwang, Sung Min; Seo, Yong Gon; Kim, Doo Soo; Baik, Kwang Hyeon; Park, Jung ho.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8484 2012. 84840H.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, JH, Hwang, SM, Seo, YG, Kim, DS, Baik, KH & Park, JH 2012, Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8484, 84840H, 12th International Conference on Solid State Lighting and 4th International Conference on White LEDs and Solid State Lighting, San Diego, CA, United States, 12/8/13. https://doi.org/10.1117/12.929523
Kim JH, Hwang SM, Seo YG, Kim DS, Baik KH, Park JH. Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8484. 2012. 84840H https://doi.org/10.1117/12.929523
Kim, Ji Hoon ; Hwang, Sung Min ; Seo, Yong Gon ; Kim, Doo Soo ; Baik, Kwang Hyeon ; Park, Jung ho. / Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8484 2012.
@inproceedings{ff023f88ad724d68908f68fcdecd6b45,
title = "Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides",
abstract = "We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.",
keywords = "A-plane gan, Metal-organic chemical vapor deposition, Nitrides, Nonpolar, Transfer length method, Transmission electron microscopy, X-ray diffraction",
author = "Kim, {Ji Hoon} and Hwang, {Sung Min} and Seo, {Yong Gon} and Kim, {Doo Soo} and Baik, {Kwang Hyeon} and Park, {Jung ho}",
year = "2012",
month = "12",
day = "1",
doi = "10.1117/12.929523",
language = "English",
isbn = "9780819492012",
volume = "8484",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

}

TY - GEN

T1 - Effect of SiNx interlayer on structural and electrical properties of nonpolar a-plane (11-20) gallium nitrides

AU - Kim, Ji Hoon

AU - Hwang, Sung Min

AU - Seo, Yong Gon

AU - Kim, Doo Soo

AU - Baik, Kwang Hyeon

AU - Park, Jung ho

PY - 2012/12/1

Y1 - 2012/12/1

N2 - We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

AB - We investigated the effects of SiNx interlayers on the structural and electrical properties of nonpolar a-plane (11-20) GaN grown on r-plane (1-102) sapphire substrates by metal-organic chemical vapor deposition (MOCVD). The Nomarski optical microscope images showed that the deposition conditions of the SiNx layer could strongly affect the aplane GaN surface morphology due to the different SiNx coverage. Basal-plane stacking faults (BSFs) and threading dislocation (TD) densities were reduced in the a-plane GaN samples with high SiNx coverage and multiple SiNx-treated GaN interlayers. These results indicate that TD reduction is associated with an increase in the 3D growth step and with the blocking of TD propagation. From on-axis (11-20) X-ray rocking curve (XRC) measurements, the anisotropy of full width at half maximum (FWHM) can be attributed to the crystal mosaicity due to insertion of different SiNx interlayers. The anisotropy of sheet resistance between the c-and m-axis was also clearly seen in a-plane GaN samples with a high density of defects, which was attributed to the BSFs as scattering centers.

KW - A-plane gan

KW - Metal-organic chemical vapor deposition

KW - Nitrides

KW - Nonpolar

KW - Transfer length method

KW - Transmission electron microscopy

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=84872191655&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84872191655&partnerID=8YFLogxK

U2 - 10.1117/12.929523

DO - 10.1117/12.929523

M3 - Conference contribution

AN - SCOPUS:84872191655

SN - 9780819492012

VL - 8484

BT - Proceedings of SPIE - The International Society for Optical Engineering

ER -