Effect of Sn Doping on the Thermoelectric Properties of n-type Bi<inf>2</inf>(Te,Se)<inf>3</inf> Alloys

Jae Uk Lee, Deuk Hee Lee, Beomjin Kwon, Dow Bin Hyun, Sahn Nahm, Seung Hyub Baek, Jin Sang Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)


In the present work, 0.01–0.05wt.% Sn-doped Bi<inf>2</inf>(Te<inf>0.9</inf>Se<inf>0.1</inf>)<inf>3</inf> alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi<inf>2</inf>(Te<inf>0.9</inf>Se<inf>0.1</inf>)<inf>3</inf> alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 × 10<sup>19</sup>/cm<sup>3</sup> to 2.4 × 10<sup>19</sup>/cm<sup>3</sup> by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

Original languageEnglish
Pages (from-to)1926-1930
Number of pages5
JournalJournal of Electronic Materials
Issue number6
Publication statusPublished - 2015 Jun 1



  • Bismuth telluride
  • hot press
  • mechanical deformation
  • Sn doping
  • thermoelectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this