Effect of SOCl2 doping on electronic properties of single-walled carbon nanotube thin film transistors

D. H. Kim, J. K. Lee, J. H. Huh, Y. H. Kim, G. T. Kim, S. Roth, U. Dettlaff-Weglikowska

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on SOCl2 doping of separated single-walled carbon nanotubes (SWCNTs) having different properties (metallic, semiconducting, and mixed). SWCNTs were doped by dropping SOCl2 on a percolated network which was prepared on a Si substrate and the doping effect was evaluated by measuring electrical characteristics. Pristine semiconducting SWCNTs showed p-type transfer characteristics. After SOCl2 doping, the conductivity of semiconducting SWCNTs increased about two times and the on/off ratio decreased by a factor of 3. Mixed pristine samples showed slight p-type characteristics and turned to metallic characteristics after doping. The network of metallic SWCNTs did not show any significant change of conductivity before and after doping.

Original languageEnglish
Pages (from-to)2668-2671
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume248
Issue number11
DOIs
Publication statusPublished - 2011 Nov

Keywords

  • Doping
  • P-type
  • Swcnts

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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