Effect of spin-dependent Mn2+ internal transitions in CdSe/Zn1-x Mnx Se magnetic semiconductor quantum dot systems

Sang Hoon Lee, M. Dobrowolska, J. K. Furdyna

Research output: Contribution to journalArticle

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Abstract

CdSe quantum dots (QDs) in a ZnMnSe diluted magnetic semiconductor (DMS) matrix were investigated using both energy- and polarization-selective magneto-photoluminescence (PL). The peaks from Mn2+ internal transition, CdSe QDs, and ZnMnSe barrier were observed in the experiment done using above-barrier excitation. By examining the dependence of the PL peak intensity on magnetic field we were able to identify the competition between the Auger-type energy transfer process (i.e., the energy transfer from band electrons to Mn2+ ions) and energy relaxation into CdSe QDs in this QD system. The role of energy transfer processes between band electrons and Mn2+ ions in the DMS QDs was further studied by using excitation energy below the ZnMnSe band gap, where no change in the intensity of internal Mn2+ transitions with magnetic field was observed, indicating that the energy transfer from carriers excited into the ZnMnSe barrier is indeed responsible for the intensity behavior of these internal Mn2+ transitions observed in DMS QD structures.

Original languageEnglish
Article number075320
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number7
DOIs
Publication statusPublished - 2005 Aug 15

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Magnetic semiconductors
Semiconductor quantum dots
quantum dots
Energy transfer
energy transfer
Photoluminescence
Ions
Magnetic fields
photoluminescence
Electrons
Excitation energy
magnetic fields
excitation
energy
ions
Energy gap
electrons
Polarization
polarization
matrices

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Effect of spin-dependent Mn2+ internal transitions in CdSe/Zn1-x Mnx Se magnetic semiconductor quantum dot systems. / Lee, Sang Hoon; Dobrowolska, M.; Furdyna, J. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 72, No. 7, 075320, 15.08.2005.

Research output: Contribution to journalArticle

@article{ba102c07bb3a44ae9531d37c83fae4cb,
title = "Effect of spin-dependent Mn2+ internal transitions in CdSe/Zn1-x Mnx Se magnetic semiconductor quantum dot systems",
abstract = "CdSe quantum dots (QDs) in a ZnMnSe diluted magnetic semiconductor (DMS) matrix were investigated using both energy- and polarization-selective magneto-photoluminescence (PL). The peaks from Mn2+ internal transition, CdSe QDs, and ZnMnSe barrier were observed in the experiment done using above-barrier excitation. By examining the dependence of the PL peak intensity on magnetic field we were able to identify the competition between the Auger-type energy transfer process (i.e., the energy transfer from band electrons to Mn2+ ions) and energy relaxation into CdSe QDs in this QD system. The role of energy transfer processes between band electrons and Mn2+ ions in the DMS QDs was further studied by using excitation energy below the ZnMnSe band gap, where no change in the intensity of internal Mn2+ transitions with magnetic field was observed, indicating that the energy transfer from carriers excited into the ZnMnSe barrier is indeed responsible for the intensity behavior of these internal Mn2+ transitions observed in DMS QD structures.",
author = "Lee, {Sang Hoon} and M. Dobrowolska and Furdyna, {J. K.}",
year = "2005",
month = "8",
day = "15",
doi = "10.1103/PhysRevB.72.075320",
language = "English",
volume = "72",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Effect of spin-dependent Mn2+ internal transitions in CdSe/Zn1-x Mnx Se magnetic semiconductor quantum dot systems

AU - Lee, Sang Hoon

AU - Dobrowolska, M.

AU - Furdyna, J. K.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - CdSe quantum dots (QDs) in a ZnMnSe diluted magnetic semiconductor (DMS) matrix were investigated using both energy- and polarization-selective magneto-photoluminescence (PL). The peaks from Mn2+ internal transition, CdSe QDs, and ZnMnSe barrier were observed in the experiment done using above-barrier excitation. By examining the dependence of the PL peak intensity on magnetic field we were able to identify the competition between the Auger-type energy transfer process (i.e., the energy transfer from band electrons to Mn2+ ions) and energy relaxation into CdSe QDs in this QD system. The role of energy transfer processes between band electrons and Mn2+ ions in the DMS QDs was further studied by using excitation energy below the ZnMnSe band gap, where no change in the intensity of internal Mn2+ transitions with magnetic field was observed, indicating that the energy transfer from carriers excited into the ZnMnSe barrier is indeed responsible for the intensity behavior of these internal Mn2+ transitions observed in DMS QD structures.

AB - CdSe quantum dots (QDs) in a ZnMnSe diluted magnetic semiconductor (DMS) matrix were investigated using both energy- and polarization-selective magneto-photoluminescence (PL). The peaks from Mn2+ internal transition, CdSe QDs, and ZnMnSe barrier were observed in the experiment done using above-barrier excitation. By examining the dependence of the PL peak intensity on magnetic field we were able to identify the competition between the Auger-type energy transfer process (i.e., the energy transfer from band electrons to Mn2+ ions) and energy relaxation into CdSe QDs in this QD system. The role of energy transfer processes between band electrons and Mn2+ ions in the DMS QDs was further studied by using excitation energy below the ZnMnSe band gap, where no change in the intensity of internal Mn2+ transitions with magnetic field was observed, indicating that the energy transfer from carriers excited into the ZnMnSe barrier is indeed responsible for the intensity behavior of these internal Mn2+ transitions observed in DMS QD structures.

UR - http://www.scopus.com/inward/record.url?scp=33644952072&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33644952072&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.72.075320

DO - 10.1103/PhysRevB.72.075320

M3 - Article

VL - 72

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 7

M1 - 075320

ER -