Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

Hyungjin Park, Kyoungah Cho, Hyungon Oh, Sangsig Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalSuperlattices and Microstructures
Volume117
DOIs
Publication statusPublished - 2018 May 1

Keywords

  • a-IGZO TFT
  • Buffer stage
  • Stiffness modulation
  • Stretchable substrate

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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