Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

Hyungjin Park, Kyoungah Cho, Hyungon Oh, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalSuperlattices and Microstructures
Volume117
DOIs
Publication statusPublished - 2018 May 1

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Mechanical stability
Thin film transistors
Zinc oxide
zinc oxides
Oxide films
indium
stiffness
transistors
Stiffness
Modulation
modulation
Substrates
thin films
Buffers
buffers
Threshold voltage

Keywords

  • a-IGZO TFT
  • Buffer stage
  • Stiffness modulation
  • Stretchable substrate

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs. / Park, Hyungjin; Cho, Kyoungah; Oh, Hyungon; Kim, Sangsig.

In: Superlattices and Microstructures, Vol. 117, 01.05.2018, p. 169-172.

Research output: Contribution to journalArticle

@article{3c4cd9da90914627bd5ff70f4cffda12,
title = "Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs",
abstract = "In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.",
keywords = "a-IGZO TFT, Buffer stage, Stiffness modulation, Stretchable substrate",
author = "Hyungjin Park and Kyoungah Cho and Hyungon Oh and Sangsig Kim",
year = "2018",
month = "5",
day = "1",
doi = "10.1016/j.spmi.2018.03.026",
language = "English",
volume = "117",
pages = "169--172",
journal = "Superlattices and Microstructures",
issn = "0749-6036",
publisher = "Academic Press Inc.",

}

TY - JOUR

T1 - Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs

AU - Park, Hyungjin

AU - Cho, Kyoungah

AU - Oh, Hyungon

AU - Kim, Sangsig

PY - 2018/5/1

Y1 - 2018/5/1

N2 - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

AB - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.

KW - a-IGZO TFT

KW - Buffer stage

KW - Stiffness modulation

KW - Stretchable substrate

UR - http://www.scopus.com/inward/record.url?scp=85046034327&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046034327&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2018.03.026

DO - 10.1016/j.spmi.2018.03.026

M3 - Article

VL - 117

SP - 169

EP - 172

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

SN - 0749-6036

ER -