TY - JOUR
T1 - Effect of stiffness modulation on mechanical stability of stretchable a-IGZO TFTs
AU - Park, Hyungjin
AU - Cho, Kyoungah
AU - Oh, Hyungon
AU - Kim, Sangsig
N1 - Funding Information:
This work was supported in part by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (No. NRF-2015R1D1A1A01057641 ), by Samsung Display Co. Ltd. , by the Brain Korea 21 Plus Project in 2018 and by the Korea University Grant.
Publisher Copyright:
© 2018 Elsevier Ltd
PY - 2018/5
Y1 - 2018/5
N2 - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.
AB - In this study, we fabricate the amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on a stretchable substrate with a buffer stage and investigate the mechanical stability and electrical characteristics when the length of the substrate is stretched by 1.7 times. The buffer stage is responsible for the stiffness modulation of the stretchable substrate. The mobility, the threshold voltage and the on/off ratio of the stretchable a-IGZO TFT are measured to be 18.1 cm2/V·s, 1 V, and 3 × 107, respectively. Our simulation conducted by a three dimensional finite elements method reveals that the stiffness modulation reduces the stress experienced by the substrate in the stretched state by about one-tenth. In addition, the mechanical stability and electrical characteristics of the a-IGZO TFT are maintained even when the substrate is stretched by 1.7 times.
KW - Buffer stage
KW - Stiffness modulation
KW - Stretchable substrate
KW - a-IGZO TFT
UR - http://www.scopus.com/inward/record.url?scp=85046034327&partnerID=8YFLogxK
U2 - 10.1016/j.spmi.2018.03.026
DO - 10.1016/j.spmi.2018.03.026
M3 - Article
AN - SCOPUS:85046034327
SN - 0749-6036
VL - 117
SP - 169
EP - 172
JO - Superlattices and Microstructures
JF - Superlattices and Microstructures
ER -