TY - JOUR
T1 - Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses
AU - Kim, Yoonjoong
AU - Kim, Sangsig
N1 - Funding Information:
This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the-Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’); and the Brain Korea 21 Plus Project in 2018.
PY - 2018/9/26
Y1 - 2018/9/26
N2 - In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.
AB - In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.
KW - bending stress
KW - feedback field-effect transistor
KW - plastic substrate
KW - positive feedback loop
KW - silicon nanowire
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U2 - 10.1088/1361-6641/aadfb5
DO - 10.1088/1361-6641/aadfb5
M3 - Article
AN - SCOPUS:85054685253
VL - 33
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 10
M1 - 105009
ER -