Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Yoonjoong Kim, Sangsig Kim

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1 Citation (Scopus)

Abstract

In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

Original languageEnglish
Article number105009
JournalSemiconductor Science and Technology
Volume33
Issue number10
DOIs
Publication statusPublished - 2018 Sep 26

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Keywords

  • bending stress
  • feedback field-effect transistor
  • plastic substrate
  • positive feedback loop
  • silicon nanowire

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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