Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Yoonjoong Kim; Sangsig Kim

doi:10.1088/1361-6641/aadfb5

Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Yoonjoong Kim, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p ⁺-i-n ⁺ doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

Original language	English
Article number	105009
Journal	Semiconductor Science and Technology
Volume	33
Issue number	10
DOIs	https://doi.org/10.1088/1361-6641/aadfb5
Publication status	Published - 2018 Sep 26

Keywords

bending stress
feedback field-effect transistor
plastic substrate
positive feedback loop
silicon nanowire

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1361-6641/aadfb5

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title = "Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses",

abstract = "In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.",

keywords = "bending stress, feedback field-effect transistor, plastic substrate, positive feedback loop, silicon nanowire",

author = "Yoonjoong Kim and Sangsig Kim",

note = "Funding Information: This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the-Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, {\textquoteleft}Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence{\textquoteright}); and the Brain Korea 21 Plus Project in 2018. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

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doi = "10.1088/1361-6641/aadfb5",

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AU - Kim, Yoonjoong

AU - Kim, Sangsig

N1 - Funding Information: This work was partly supported by a National Research Foundation of Korea (NRF) Grant funded by the Korean Government (MSIP) (NRF-2016R1E1A1A02920171); the-Ministry of Trade, Industry & Energy (MOTIE, Korea) under the Industrial Strategic Technology Development Program (10067791, ‘Development of fabrication and device structure of feedback Si channel 1T-SRAM for artificial intelligence’); and the Brain Korea 21 Plus Project in 2018. Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/9/26

Y1 - 2018/9/26

N2 - In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

AB - In this study we investigate the influence of substrate materials on the electrical characteristics of feedback field-effect transistors (FETs) when subjected to bending fatigue. Each of our transistors are composed of a p +-i-n + doped silicon nanowire and dual-top metal gates. Feedback FETs on Ecoflex substrates feature outstanding stability compared to those on polyethersulphone and polydimethysiloxane substrates, even at a bending strain of 11.67%. The threshold voltage shift is within the range of 0.3 V, and the on-current only decreases by 15.5% (or less), when compared to the initial flat conditions. Moreover, our devices have outstanding reliability, even after 5000 cycles of repeated bending.

KW - bending stress

KW - feedback field-effect transistor

KW - plastic substrate

KW - positive feedback loop

KW - silicon nanowire

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U2 - 10.1088/1361-6641/aadfb5

DO - 10.1088/1361-6641/aadfb5

M3 - Article

AN - SCOPUS:85054685253

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 105009

ER -

Effect of substrates on the electrical characteristics of a silicon nanowire feedback field-effect transistor under bending stresses

Abstract

Keywords

ASJC Scopus subject areas

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