Effect of sulphur vacancy on geometric and electronic structure of MoS 2 induced by molecular hydrogen treatment at room temperature

Byung Hoon Kim, Min Park, Minoh Lee, Seung Jae Baek, Hu Young Jeong, Min Choi, Sung Jin Chang, Won G. Hong, Tae Kyung Kim, Hoi Ri Moon, Yung Woo Park, Noejung Park, Yongseok Jun

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

Investigations into the interaction between molecular hydrogen and molybdenum disulphide have been in increasing demand to improve the understanding of the hydrodesulphurisation process, especially the creation of sulphur vacancies which result in coordinatively unsaturated sites in MoS 2. Here we present comprehensive studies of the structural and electronic modulation caused by exposure of MoS2 to H2 over a low temperature range, which may be helpful for industrial applications. Detail investigations were conducted with Raman spectroscopy, high resolution transmission electron microscopy (HRTEM), and electrical transport properties as a function of H2 gas pressure up to 24 bar from 295 K to 350 K. Upon exposure to H2, we observed bond-softening using Raman spectroscopy, a decrease in d-spacing from the TEM results, and an increase in conductance, all of which are consistent with the first-principles calculations. The results demonstrate the formation of sulphur vacancies even under low H2 pressure at low temperature.

Original languageEnglish
Pages (from-to)18424-18429
Number of pages6
JournalRSC Advances
Volume3
Issue number40
DOIs
Publication statusPublished - 2013 Oct 28
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)

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