Effect of Te inclusions in CdZnTe crystals at different temperatures

A. Hossain, A. E. Bolotnikov, G. S. Camarda, R. Gul, K. H. Kim, Y. Cui, G. Yang, L. Xu, R. B. James

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.

Original languageEnglish
Article number044504
JournalJournal of Applied Physics
Volume109
Issue number4
DOIs
Publication statusPublished - 2011 Feb 15
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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