Abstract
CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.
| Original language | English |
|---|---|
| Article number | 044504 |
| Journal | Journal of Applied Physics |
| Volume | 109 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Feb 15 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Effect of Te inclusions in CdZnTe crystals at different temperatures. / Hossain, A.; Bolotnikov, A. E.; Camarda, G. S.; Gul, R.; Kim, Kihyun; Cui, Y.; Yang, G.; Xu, L.; James, R. B.
In: Journal of Applied Physics, Vol. 109, No. 4, 044504, 15.02.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of Te inclusions in CdZnTe crystals at different temperatures
AU - Hossain, A.
AU - Bolotnikov, A. E.
AU - Camarda, G. S.
AU - Gul, R.
AU - Kim, Kihyun
AU - Cui, Y.
AU - Yang, G.
AU - Xu, L.
AU - James, R. B.
PY - 2011/2/15
Y1 - 2011/2/15
N2 - CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.
AB - CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.
UR - http://www.scopus.com/inward/record.url?scp=79952124920&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952124920&partnerID=8YFLogxK
U2 - 10.1063/1.3549236
DO - 10.1063/1.3549236
M3 - Article
AN - SCOPUS:79952124920
VL - 109
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 4
M1 - 044504
ER -