Abstract
CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-μm resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 °C), but it was hardly altered at room-temperature.
Original language | English |
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Article number | 044504 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2011 Feb 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)