Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode

Jae Ho Han, Sung Woong Park

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We fabricated and investigated the thermal characteristics of TO-CAN (transistor-outline-can) packaged long wavelength GaInAsP/InP Fabry-Perot laser diode. Characteristic temperature of 55 K and peak wavelength shift of 0.4 nm/°C depending on the temperatures were obtained. Furthermore, overheating of semiconductor laser originated from thermal resistance is analyzed and evaluated by measuring junction temperature. Results from experiment and estimation are compared at extreme operating conditions in which show agreement within 1 °C.

Original languageEnglish
Pages (from-to)6-9
Number of pages4
JournalCurrent Applied Physics
Volume7
Issue number1
DOIs
Publication statusPublished - 2007 Jan 1
Externally publishedYes

Fingerprint

Semiconductor lasers
Transistors
transistors
semiconductor lasers
injection
lasers
Wavelength
thermal resistance
Heat resistance
wavelengths
Temperature
temperature
shift
Experiments
Hot Temperature

Keywords

  • Junction temperature
  • Laser diode
  • Semiconductor lasers
  • Thermal characteristics

ASJC Scopus subject areas

  • Materials Science (miscellaneous)
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Effect of temperature and injection current on characteristics of TO-CAN packaged Fabry-Perot laser diode. / Han, Jae Ho; Park, Sung Woong.

In: Current Applied Physics, Vol. 7, No. 1, 01.01.2007, p. 6-9.

Research output: Contribution to journalArticle

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