Effect of the deposition temperature on the transmittance & electrical conductivity of In1.6Zn0.2Sn0.2O 3-δ thin films prepared by RF-magnetron sputtering

Han Seo, Mi Jung Ji, Yong Tea An, Byeong Kwon Ju, Byung Hyun Choi

Research output: Contribution to journalArticle

Abstract

In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In1.6~1.8Zn0.2Sn0.2~0.4O 3 (IZTO), In1.6Zn0.2Sn0.2O 3-δ(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400°C, the electrical resistivity of the film decreased to 6.34 × 10-4 Ω·cm and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

Original languageEnglish
Pages (from-to)663-668
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume49
Issue number6
DOIs
Publication statusPublished - 2012 Nov 1

Fingerprint

Magnetron sputtering
Oxide films
Indium
Thin films
Opacity
Temperature
Electric Conductivity

Keywords

  • Deposition temperature
  • InZnSn O
  • Indium
  • TCOs
  • Thin films

ASJC Scopus subject areas

  • Ceramics and Composites

Cite this

Effect of the deposition temperature on the transmittance & electrical conductivity of In1.6Zn0.2Sn0.2O 3-δ thin films prepared by RF-magnetron sputtering. / Seo, Han; Ji, Mi Jung; An, Yong Tea; Ju, Byeong Kwon; Choi, Byung Hyun.

In: Journal of the Korean Ceramic Society, Vol. 49, No. 6, 01.11.2012, p. 663-668.

Research output: Contribution to journalArticle

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abstract = "In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In1.6~1.8Zn0.2Sn0.2~0.4O 3 (IZTO), In1.6Zn0.2Sn0.2O 3-δ(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400°C, the electrical resistivity of the film decreased to 6.34 × 10-4 Ω·cm and the optical transmittance was 80{\%}. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.",
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AU - Ji, Mi Jung

AU - An, Yong Tea

AU - Ju, Byeong Kwon

AU - Choi, Byung Hyun

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AB - In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In1.6~1.8Zn0.2Sn0.2~0.4O 3 (IZTO), In1.6Zn0.2Sn0.2O 3-δ(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400°C, the electrical resistivity of the film decreased to 6.34 × 10-4 Ω·cm and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

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KW - Thin films

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