Effect of the deposition temperature on the transmittance & electrical conductivity of In1.6Zn0.2Sn0.2O 3-δ thin films prepared by RF-magnetron sputtering

Han Seo, Mi Jung Ji, Yong Tea An, Byeong Kwon Ju, Byung Hyun Choi

Research output: Contribution to journalArticlepeer-review


In order to reduce the indium contents in transparent conducting oxide(TCO) thin films of In1.6~1.8Zn0.2Sn0.2~0.4O 3 (IZTO), In1.6Zn0.2Sn0.2O 3-δ(IZTO) was prepared by replacing indium with Zn and Sn. The TCO films were deposited via RF-magnetron sputtering of the IZTO target at various deposition temperatures and its film characteristics were investigated. When deposited in an Ar atmosphere at 400°C, the electrical resistivity of the film decreased to 6.34 × 10-4 Ω·cm and the optical transmittance was 80%. As the deposition temperature increased, the crystallinity of the IZTO film was enhanced. As a result, the electrical conductivity and transmittance properties were improved. This demonstrates the possibility of replacing ITO TCO film with IZTO.

Original languageEnglish
Pages (from-to)663-668
Number of pages6
JournalJournal of the Korean Ceramic Society
Issue number6
Publication statusPublished - 2012 Nov


  • Deposition temperature
  • InZnSn O
  • Indium
  • TCOs
  • Thin films

ASJC Scopus subject areas

  • Ceramics and Composites


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