Effect of the growth temperature on the properties of Al xGa l-xN epilayers grown by HVPE

Ji Sun Lee, Dong Jin Byun, Hae Kon Oh, Young Jun Choi, Hae Yong Lee, Jin Ho Kim, Tae Young Lim, Jonghee Hwang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Growth of the Al xGa 1-xN ternary alloy using AlCl 3 and GaCl gases on sapphire substrate by hydride vapor phase epitaxy (HVPE) is presented in this study. Al xGa 1-xN epilayers were grown directly on sapphire substrate. To investigate the effect of growth temperature, we varied temperature from 1050 to 1090 °C at intervals of 20 °C. Some compositional non-uniformity was observed on the epilayer grown at 1050 °C from the results of UV-vis spectrophotometry, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Such a compositional non-uniformity disappeared with the increase of growth temperature and it was confirmed with the existence of Ga-rich islands shown by electron probe microanalysis (EPMA) compositional mapping. In addition, other characteristics such as surface roughness and crystallinity also improved with the increase of growth temperature and showed best results at 1090 °C. The Al composition of epilayer grown at 1090 °C was around 30%.

Original languageEnglish
Pages (from-to)83-88
Number of pages6
JournalJournal of Crystal Growth
Volume346
Issue number1
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

Vapor phase epitaxy
Epilayers
Growth temperature
Hydrides
vapor phase epitaxy
hydrides
Aluminum Oxide
Sapphire
nonuniformity
sapphire
Ternary alloys
Spectrophotometry
Electron probe microanalysis
Substrates
temperature
ternary alloys
electron probes
spectrophotometry
X ray photoelectron spectroscopy
Gases

Keywords

  • A1. Compositional non-uniformity
  • A1. Growth temperature
  • A3. HVPE
  • B1. AlGaN

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Effect of the growth temperature on the properties of Al xGa l-xN epilayers grown by HVPE. / Lee, Ji Sun; Byun, Dong Jin; Oh, Hae Kon; Choi, Young Jun; Lee, Hae Yong; Kim, Jin Ho; Lim, Tae Young; Hwang, Jonghee.

In: Journal of Crystal Growth, Vol. 346, No. 1, 01.05.2012, p. 83-88.

Research output: Contribution to journalArticle

Lee, Ji Sun ; Byun, Dong Jin ; Oh, Hae Kon ; Choi, Young Jun ; Lee, Hae Yong ; Kim, Jin Ho ; Lim, Tae Young ; Hwang, Jonghee. / Effect of the growth temperature on the properties of Al xGa l-xN epilayers grown by HVPE. In: Journal of Crystal Growth. 2012 ; Vol. 346, No. 1. pp. 83-88.
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