Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering

Dong Ho Kim, Chul Min Kim, Eun Hong Kim, Young Chul Shin, Tae Geun Kim, Cheong Hyun Roh, Cheol Koo Hahn

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.

Original languageEnglish
Pages (from-to)1149-1152
Number of pages4
JournalJournal of the Korean Physical Society
Volume55
Issue number3
Publication statusPublished - 2009 Jan 1

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zirconium nitrides
sputtering
direct current
synthesis
thin films
electrical properties
atomic force microscopy
electrical resistivity
scanning electron microscopy
room temperature
diffraction
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering. / Ho Kim, Dong; Kim, Chul Min; Kim, Eun Hong; Shin, Young Chul; Kim, Tae Geun; Roh, Cheong Hyun; Hahn, Cheol Koo.

In: Journal of the Korean Physical Society, Vol. 55, No. 3, 01.01.2009, p. 1149-1152.

Research output: Contribution to journalArticle

Ho Kim, Dong ; Kim, Chul Min ; Kim, Eun Hong ; Shin, Young Chul ; Kim, Tae Geun ; Roh, Cheong Hyun ; Hahn, Cheol Koo. / Effect of the N2/(Ar+N2) flow ratio on the synthesis of zirconium nitride thin films by DC reactive sputtering. In: Journal of the Korean Physical Society. 2009 ; Vol. 55, No. 3. pp. 1149-1152.
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AU - Shin, Young Chul

AU - Kim, Tae Geun

AU - Roh, Cheong Hyun

AU - Hahn, Cheol Koo

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N2 - We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.

AB - We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.

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