We investigate the effect of the N2/(Ar+N2) flow ratio (F(N2)) on the structural and the electrical properties of ZrNx thin films deposited on Si(111) substrates by DC reactive sputtering at room temperature (R.T.), by using glancing-angle X-ray diffraction (GA-XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). The films show stoichiometric ZrN structures for F(N2) from 4.3% to 10% and changed into non-stoichiometric Zr3N4 structures with increasing F(N2) from 11.8% to 25%. On the other hand, the electrical resistivity rapidly increase from 40.8 μ·cm to 1291.87 μ·cm with increasing F(N2), which may be related to compositional changes from ZrN to Zr3N4. We also observed that the stoichiometric ZrN film had larger and denser granular-type grains because of it had a higher growth rate of grains than the non-stoichiometric Zr3N4 film.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2009 Jan 1|
ASJC Scopus subject areas
- Physics and Astronomy(all)