Effect of the phosphorus gettering on Si heterojunction solar cells

Hyomin Park, Sung Ju Tark, Chan Seok Kim, Sungeun Park, Young Do Kim, Chang Sik Son, Jeong Chul Lee, Donghwan Kim

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8μs. Open-circuit voltage and short-circuit current density increase from 577 to 598mV and 27.8 to 29.8mA/cm 2, respectively. The efficiency of solar cells increases from 11.9 to 13.4% P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

Original languageEnglish
Article number794876
JournalInternational Journal of Photoenergy
Volume2012
DOIs
Publication statusPublished - 2012 Mar 16

Fingerprint

Phosphorus
Heterojunctions
phosphorus
heterojunctions
Solar cells
solar cells
wafers
Current density
Impurities
current density
solar simulators
Dark currents
Silicon solar cells
Open circuit voltage
impurities
Quantum efficiency
Short circuit currents
minorities
short circuit currents
dark current

ASJC Scopus subject areas

  • Renewable Energy, Sustainability and the Environment
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)

Cite this

Effect of the phosphorus gettering on Si heterojunction solar cells. / Park, Hyomin; Tark, Sung Ju; Kim, Chan Seok; Park, Sungeun; Kim, Young Do; Son, Chang Sik; Lee, Jeong Chul; Kim, Donghwan.

In: International Journal of Photoenergy, Vol. 2012, 794876, 16.03.2012.

Research output: Contribution to journalArticle

Park, Hyomin ; Tark, Sung Ju ; Kim, Chan Seok ; Park, Sungeun ; Kim, Young Do ; Son, Chang Sik ; Lee, Jeong Chul ; Kim, Donghwan. / Effect of the phosphorus gettering on Si heterojunction solar cells. In: International Journal of Photoenergy. 2012 ; Vol. 2012.
@article{52ef118f9b9b433d8bba3536b88eddba,
title = "Effect of the phosphorus gettering on Si heterojunction solar cells",
abstract = "To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8μs. Open-circuit voltage and short-circuit current density increase from 577 to 598mV and 27.8 to 29.8mA/cm 2, respectively. The efficiency of solar cells increases from 11.9 to 13.4{\%} P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.",
author = "Hyomin Park and Tark, {Sung Ju} and Kim, {Chan Seok} and Sungeun Park and Kim, {Young Do} and Son, {Chang Sik} and Lee, {Jeong Chul} and Donghwan Kim",
year = "2012",
month = "3",
day = "16",
doi = "10.1155/2012/794876",
language = "English",
volume = "2012",
journal = "International Journal of Photoenergy",
issn = "1110-662X",
publisher = "Hindawi Publishing Corporation",

}

TY - JOUR

T1 - Effect of the phosphorus gettering on Si heterojunction solar cells

AU - Park, Hyomin

AU - Tark, Sung Ju

AU - Kim, Chan Seok

AU - Park, Sungeun

AU - Kim, Young Do

AU - Son, Chang Sik

AU - Lee, Jeong Chul

AU - Kim, Donghwan

PY - 2012/3/16

Y1 - 2012/3/16

N2 - To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8μs. Open-circuit voltage and short-circuit current density increase from 577 to 598mV and 27.8 to 29.8mA/cm 2, respectively. The efficiency of solar cells increases from 11.9 to 13.4% P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

AB - To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8μs. Open-circuit voltage and short-circuit current density increase from 577 to 598mV and 27.8 to 29.8mA/cm 2, respectively. The efficiency of solar cells increases from 11.9 to 13.4% P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

UR - http://www.scopus.com/inward/record.url?scp=84863256726&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863256726&partnerID=8YFLogxK

U2 - 10.1155/2012/794876

DO - 10.1155/2012/794876

M3 - Article

VL - 2012

JO - International Journal of Photoenergy

JF - International Journal of Photoenergy

SN - 1110-662X

M1 - 794876

ER -