Effect of thermal annealing of lead oxide film

Ohhyeon Hwang, Sangsu Kim, Jonghee Suh, Shinhang Cho, Kihyun Kim, Jinki Hong, Sunung Kim

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 /s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5×10 12 Ω cm is measured, and is comparable with the best data of PbO.

Original languageEnglish
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume633
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2011 May 1
Externally publishedYes

Keywords

  • Direct conversion
  • Lead oxide
  • PbO
  • X-ray detector

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Fingerprint Dive into the research topics of 'Effect of thermal annealing of lead oxide film'. Together they form a unique fingerprint.

  • Cite this