Abstract
Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 /s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5×10 12 Ω cm is measured, and is comparable with the best data of PbO.
| Original language | English |
|---|---|
| Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
| Volume | 633 |
| Issue number | SUPPL. 1 |
| DOIs | |
| Publication status | Published - 2011 May 1 |
| Externally published | Yes |
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Keywords
- Direct conversion
- Lead oxide
- PbO
- X-ray detector
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Effect of thermal annealing of lead oxide film. / Hwang, Ohhyeon; Kim, Sangsu; Suh, Jonghee; Cho, Shinhang; Kim, Kihyun; Hong, Jinki; Kim, Sunung.
In: Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol. 633, No. SUPPL. 1, 01.05.2011.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of thermal annealing of lead oxide film
AU - Hwang, Ohhyeon
AU - Kim, Sangsu
AU - Suh, Jonghee
AU - Cho, Shinhang
AU - Kim, Kihyun
AU - Hong, Jinki
AU - Kim, Sunung
PY - 2011/5/1
Y1 - 2011/5/1
N2 - Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 /s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5×10 12 Ω cm is measured, and is comparable with the best data of PbO.
AB - Oxygen partial pressure in a growth process of lead oxide determines chemical and physical properties as well as crystalline structure. In order to supply oxygen, two ring-shape suppliers have been installed in a growth chamber. Films have been deposited using vacuum thermal evaporation from a raw material of yellow lead oxide powder (5N). Growth rate is controlled to be about 400 /s, and film thickness more than 50 μm has been achieved. After deposition, the film is annealed at various temperatures under an oxygen atmosphere. In this study, an optimum growth condition for a good X-ray detector has been achieved by fine control of oxygen flow-rate and by thermal treatment. An electrical resistivity of 4.5×10 12 Ω cm is measured, and is comparable with the best data of PbO.
KW - Direct conversion
KW - Lead oxide
KW - PbO
KW - X-ray detector
UR - http://www.scopus.com/inward/record.url?scp=79959828757&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79959828757&partnerID=8YFLogxK
U2 - 10.1016/j.nima.2010.06.125
DO - 10.1016/j.nima.2010.06.125
M3 - Article
AN - SCOPUS:79959828757
VL - 633
JO - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
JF - Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
SN - 0168-9002
IS - SUPPL. 1
ER -