Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor

Sang Hoon Lee, Yujin Jeong, Hakjoon Lee, Sangyeop Lee, Taehee Yoo, X. Liu, J. K. Furdyna

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We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 °C. In particular, the uniaxial anisotropy along the [010] direction in as-grown GaMnAs film changed to the [100] direction by rotating by 90° after the sample was annealed at 300 °C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature.

Original languageEnglish
Pages (from-to)1775-1778
Number of pages4
JournalCurrent Applied Physics
Issue number12
Publication statusPublished - 2014 Jan 1


ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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