Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor

Sang Hoon Lee, Yujin Jeong, Hakjoon Lee, Sangyeop Lee, Taehee Yoo, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 °C. In particular, the uniaxial anisotropy along the [010] direction in as-grown GaMnAs film changed to the [100] direction by rotating by 90° after the sample was annealed at 300 °C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature.

Original languageEnglish
Pages (from-to)1775-1778
Number of pages4
JournalCurrent Applied Physics
Volume14
Issue number12
DOIs
Publication statusPublished - 2014 Jan 1

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Magnetic anisotropy
Annealing
Semiconductor materials
anisotropy
annealing
Anisotropy
Epilayers
Hall effect
Molecular beam epitaxy
symmetry
Hot Temperature
Temperature
molecular beam epitaxy
Direction compound
temperature

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor. / Lee, Sang Hoon; Jeong, Yujin; Lee, Hakjoon; Lee, Sangyeop; Yoo, Taehee; Liu, X.; Furdyna, J. K.

In: Current Applied Physics, Vol. 14, No. 12, 01.01.2014, p. 1775-1778.

Research output: Contribution to journalArticle

Lee, Sang Hoon ; Jeong, Yujin ; Lee, Hakjoon ; Lee, Sangyeop ; Yoo, Taehee ; Liu, X. ; Furdyna, J. K. / Effect of thermal annealing on the magnetic anisotropy of GaMnAs ferromagnetic semiconductor. In: Current Applied Physics. 2014 ; Vol. 14, No. 12. pp. 1775-1778.
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AU - Yoo, Taehee

AU - Liu, X.

AU - Furdyna, J. K.

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N2 - We have systematically investigated the influence of annealing on the magnetic anisotropy properties of GaMnAs film using an epilayer with a Mn concentration of 6.2%. The GaMnAs epilayer was grown by molecular beam epitaxy and the planar Hall effect measurement was used to monitor the magnetic anisotropy of the film. We found significant annealing-induced changes in the magnetic anisotropy properties of the GaMnAs film that depended on the annealing conditions. For example, the cubic anisotropy that gave a four-fold symmetry of magnetic easy axes decreased while the uniaxial anisotropy that gave a two-fold symmetry of magnetic easy axes increases in the samples annealed temperature below 300 °C. In particular, the uniaxial anisotropy along the [010] direction in as-grown GaMnAs film changed to the [100] direction by rotating by 90° after the sample was annealed at 300 °C for 3 h. This investigation thus indicates that the magnitude and the direction of the magnetic anisotropy in the GaMnAs film can be effectively controlled by choosing an appropriate annealing time and temperature.

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