Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang, D. Ahn, S. H. Hong, H. K. Kim, S. W. Hwang, B. H. Jeon, J. H. Choi

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21 Citations (Scopus)

Abstract

The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

Original languageEnglish
Pages (from-to)1636-1638
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number9
DOIs
Publication statusPublished - 2004 Aug 30

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hwang, J. S., Ahn, D., Hong, S. H., Kim, H. K., Hwang, S. W., Jeon, B. H., & Choi, J. H. (2004). Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes. Applied Physics Letters, 85(9), 1636-1638. https://doi.org/10.1063/1.1786367