Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang, D. Ahn, S. H. Hong, H. K. Kim, S. W. Hwang, B. H. Jeon, Jong-Ho Choi

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Abstract

The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

Original languageEnglish
Pages (from-to)1636-1638
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number9
DOIs
Publication statusPublished - 2004 Aug 30

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contact resistance
nanowires
electrodes
metals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes. / Hwang, J. S.; Ahn, D.; Hong, S. H.; Kim, H. K.; Hwang, S. W.; Jeon, B. H.; Choi, Jong-Ho.

In: Applied Physics Letters, Vol. 85, No. 9, 30.08.2004, p. 1636-1638.

Research output: Contribution to journalArticle

Hwang, J. S. ; Ahn, D. ; Hong, S. H. ; Kim, H. K. ; Hwang, S. W. ; Jeon, B. H. ; Choi, Jong-Ho. / Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes. In: Applied Physics Letters. 2004 ; Vol. 85, No. 9. pp. 1636-1638.
@article{ff9fc7339ced4ab9b25af76065146ffb,
title = "Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes",
abstract = "The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.",
author = "Hwang, {J. S.} and D. Ahn and Hong, {S. H.} and Kim, {H. K.} and Hwang, {S. W.} and Jeon, {B. H.} and Jong-Ho Choi",
year = "2004",
month = "8",
day = "30",
doi = "10.1063/1.1786367",
language = "English",
volume = "85",
pages = "1636--1638",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

AU - Hwang, J. S.

AU - Ahn, D.

AU - Hong, S. H.

AU - Kim, H. K.

AU - Hwang, S. W.

AU - Jeon, B. H.

AU - Choi, Jong-Ho

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

AB - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

UR - http://www.scopus.com/inward/record.url?scp=4944233565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4944233565&partnerID=8YFLogxK

U2 - 10.1063/1.1786367

DO - 10.1063/1.1786367

M3 - Article

VL - 85

SP - 1636

EP - 1638

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -