Abstract
The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.
| Original language | English |
|---|---|
| Pages (from-to) | 1636-1638 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 85 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2004 Aug 30 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes. / Hwang, J. S.; Ahn, D.; Hong, S. H.; Kim, H. K.; Hwang, S. W.; Jeon, B. H.; Choi, Jong-Ho.
In: Applied Physics Letters, Vol. 85, No. 9, 30.08.2004, p. 1636-1638.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes
AU - Hwang, J. S.
AU - Ahn, D.
AU - Hong, S. H.
AU - Kim, H. K.
AU - Hwang, S. W.
AU - Jeon, B. H.
AU - Choi, Jong-Ho
PY - 2004/8/30
Y1 - 2004/8/30
N2 - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.
AB - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.
UR - http://www.scopus.com/inward/record.url?scp=4944233565&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4944233565&partnerID=8YFLogxK
U2 - 10.1063/1.1786367
DO - 10.1063/1.1786367
M3 - Article
VL - 85
SP - 1636
EP - 1638
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 9
ER -