Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang; D. Ahn; S. H. Hong; H. K. Kim; S. W. Hwang; B. H. Jeon; J. H. Choi

doi:10.1063/1.1786367

Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang, D. Ahn, S. H. Hong, H. K. Kim, S. W. Hwang, B. H. Jeon, J. H. Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO₂ interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiO_x.

Original language	English
Pages (from-to)	1636-1638
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1786367
Publication status	Published - 2004 Aug 30

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.",

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AU - Hwang, J. S.

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AU - Jeon, B. H.

AU - Choi, J. H.

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