Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang; D. Ahn; S. H. Hong; H. K. Kim; S. W. Hwang; B. H. Jeon; J. H. Choi

doi:10.1063/1.1786367

Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

J. S. Hwang, D. Ahn, S. H. Hong, H. K. Kim, S. W. Hwang, B. H. Jeon, J. H. Choi

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO₂ interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiO_x.

Original language	English
Pages (from-to)	1636-1638
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	9
DOIs	https://doi.org/10.1063/1.1786367
Publication status	Published - 2004 Aug 30

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1786367

Cite this

@article{ff9fc7339ced4ab9b25af76065146ffb,

title = "Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes",

abstract = "The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.",

author = "Hwang, {J. S.} and D. Ahn and Hong, {S. H.} and Kim, {H. K.} and Hwang, {S. W.} and Jeon, {B. H.} and Choi, {J. H.}",

note = "Funding Information: This work is supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program under Contract No. M10116000008-02F0000-00610. The work at Korea University is supported by the Brain Korea 21 Project in 2003. ",

year = "2004",

month = aug,

day = "30",

doi = "10.1063/1.1786367",

language = "English",

volume = "85",

pages = "1636--1638",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

AU - Hwang, J. S.

AU - Ahn, D.

AU - Hong, S. H.

AU - Kim, H. K.

AU - Hwang, S. W.

AU - Jeon, B. H.

AU - Choi, J. H.

N1 - Funding Information: This work is supported by the Korean Ministry of Science and Technology through the Creative Research Initiatives Program under Contract No. M10116000008-02F0000-00610. The work at Korea University is supported by the Brain Korea 21 Project in 2003.

PY - 2004/8/30

Y1 - 2004/8/30

N2 - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

AB - The effect of Ti on the contact resistance between metal electrodes and GaN nanowires was investigated. Five groups of devices having Ti/Au electrodes with different Ti/Au compositions were prepared and the I-V characteristics were measured. The resistance was reduced from 0.57 Gω to 1.3 kω as the thickness of Ti increases from 0 to 30 nm. The observed resistance value of 1.3 kω was found to be three orders of magnitude smaller than previously reported values. The results show that the metal/SiO2 interface structure probed by self-assembled monolayers (SAM) is also consistent with the formation of TiOx.

UR - http://www.scopus.com/inward/record.url?scp=4944233565&partnerID=8YFLogxK

U2 - 10.1063/1.1786367

DO - 10.1063/1.1786367

M3 - Article

AN - SCOPUS:4944233565

VL - 85

SP - 1636

EP - 1638

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -

Effect of Ti thickness on contact resistance between GaN nanowires and Ti/Au electrodes

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this