Effect of TiO 2 and SnO 2 on the microwave dielectric properties of Ba(Mg 1/3Ta 2/3)O 3 ceramics

Chang Hak Choi, Sahn Nahm, Yong Won Song, Jae Dong Byun, Young Sik Kim, Hwack Joo Lee, Hyun Min Park

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Abstract

The effects of TiO 2 and SnO 2 additives on the sinterability and the microwave dielectric properties of Ba(Mg 1/3Ta 2/3)O 3 (BMT) ceramics were investigated. X-ray diffraction and electron probe microanalysis results implied that Ti +4 and Sn +4 ions substituted for the Ta +5 ions in BMT. The splitting of the (422) and (226) peaks was significantly reduced when the contents of the additives exceeded 1.0 mol%, indicating a decrease of 1 : 2 ordering. The grain size, the relative density, the dielectric constant and the Q-value of BMT increased with the addition of a small amount of TiO 2 (or SnO 2). However, a large addition of TiO 2 or SnO 2 reduced the relative density, the dielectric constant, and the Q-value of BMT. The temperature coefficient of the resonant frequency (TC f) of BMT increased with the addition of TiO 2 and decreased with the addition of SnO 2. The following values were obtained with a 0.2 mol% TiO 2 addition: ε r=24.9, Q × f 0≃100,000 (f o = 8 GHz), and TC f=8.7 ppm/°C.

Original languageEnglish
Pages (from-to)S410-S414
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
Publication statusPublished - 1999

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Choi, C. H., Nahm, S., Song, Y. W., Byun, J. D., Kim, Y. S., Lee, H. J., & Park, H. M. (1999). Effect of TiO 2 and SnO 2 on the microwave dielectric properties of Ba(Mg 1/3Ta 2/3)O 3 ceramics. Journal of the Korean Physical Society, 35(SUPPL. 2), S410-S414.