We have investigated magnetic properties of Ni film specimens deposited either on GaAs or on Bi2Se3 surfaces. The magnetization saturation field along the out-of-plane direction observed in the Hall data was weaker for the Ni/Bi2Se3 sample than for the Ni/GaAs sample. On the other hand, planar Hall resistance measurements showed the larger in-plane coercive field for Ni/Bi2Se3 than for Ni/GaAs. These changes of magnetic hardness observed along the out-of-plane and in-plane directions in the Ni/Bi2Se3 specimen are consistent with effects arising from spin-orbit interaction at the surface of the Bi2Se3 topological insulator.
- Ferromagnetic (FM) films
- magnetic anisotropy
- planar Hall effect (PHR)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering