Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun-Yong Yu, Shen Ren, Masaharu Kobayashi, David A B Miller, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

Original languageEnglish
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages369-370
Number of pages2
DOIs
Publication statusPublished - 2009 Dec 29
Externally publishedYes
Event2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - Belek-Antalya, Turkey
Duration: 2009 Oct 42009 Oct 8

Other

Other2009 IEEE LEOS Annual Meeting Conference, LEOS '09
CountryTurkey
CityBelek-Antalya
Period09/10/409/10/8

Fingerprint

Photodiodes
Absorption spectra
Wavelength

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Yu, H-Y., Ren, S., Kobayashi, M., Miller, D. A. B., Nishi, Y., & Saraswat, K. C. (2009). Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (pp. 369-370). [5343100] https://doi.org/10.1109/LEOS.2009.5343100

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. / Yu, Hyun-Yong; Ren, Shen; Kobayashi, Masaharu; Miller, David A B; Nishi, Yoshio; Saraswat, Krishna C.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2009. p. 369-370 5343100.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yu, H-Y, Ren, S, Kobayashi, M, Miller, DAB, Nishi, Y & Saraswat, KC 2009, Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS., 5343100, pp. 369-370, 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, 09/10/4. https://doi.org/10.1109/LEOS.2009.5343100
Yu H-Y, Ren S, Kobayashi M, Miller DAB, Nishi Y, Saraswat KC. Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2009. p. 369-370. 5343100 https://doi.org/10.1109/LEOS.2009.5343100
Yu, Hyun-Yong ; Ren, Shen ; Kobayashi, Masaharu ; Miller, David A B ; Nishi, Yoshio ; Saraswat, Krishna C. / Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. 2009. pp. 369-370
@inproceedings{3fdb6dc321244b05b1bffa34e3d9cccf,
title = "Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si",
abstract = "We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.",
author = "Hyun-Yong Yu and Shen Ren and Masaharu Kobayashi and Miller, {David A B} and Yoshio Nishi and Saraswat, {Krishna C.}",
year = "2009",
month = "12",
day = "29",
doi = "10.1109/LEOS.2009.5343100",
language = "English",
isbn = "9781424436804",
pages = "369--370",
booktitle = "Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS",

}

TY - GEN

T1 - Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

AU - Yu, Hyun-Yong

AU - Ren, Shen

AU - Kobayashi, Masaharu

AU - Miller, David A B

AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

PY - 2009/12/29

Y1 - 2009/12/29

N2 - We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

AB - We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

UR - http://www.scopus.com/inward/record.url?scp=72549119386&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=72549119386&partnerID=8YFLogxK

U2 - 10.1109/LEOS.2009.5343100

DO - 10.1109/LEOS.2009.5343100

M3 - Conference contribution

SN - 9781424436804

SP - 369

EP - 370

BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS

ER -