Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu; Shen Ren; Masaharu Kobayashi; David A.B. Miller; Yoshio Nishi; Krishna C. Saraswat

doi:10.1109/LEOS.2009.5343100

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu, Shen Ren, Masaharu Kobayashi, David A.B. Miller, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

Original language	English
Title of host publication	2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09
Pages	369-370
Number of pages	2
DOIs	https://doi.org/10.1109/LEOS.2009.5343100
Publication status	Published - 2009
Externally published	Yes
Event	2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - Belek-Antalya, Turkey Duration: 2009 Oct 4 → 2009 Oct 8

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)	1092-8081

Other

Other	2009 IEEE LEOS Annual Meeting Conference, LEOS '09
Country/Territory	Turkey
City	Belek-Antalya
Period	09/10/4 → 09/10/8

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LEOS.2009.5343100

Cite this

Yu, H. Y., Ren, S., Kobayashi, M., Miller, D. A. B., Nishi, Y., & Saraswat, K. C. (2009). Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. In 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09 (pp. 369-370). [5343100] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2009.5343100

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. / Yu, Hyun Yong; Ren, Shen; Kobayashi, Masaharu et al.

2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09. 2009. p. 369-370 5343100 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, HY, Ren, S, Kobayashi, M, Miller, DAB, Nishi, Y & Saraswat, KC 2009, Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. in 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09., 5343100, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS, pp. 369-370, 2009 IEEE LEOS Annual Meeting Conference, LEOS '09, Belek-Antalya, Turkey, 09/10/4. https://doi.org/10.1109/LEOS.2009.5343100

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abstract = "We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.",

author = "Yu, {Hyun Yong} and Shen Ren and Masaharu Kobayashi and Miller, {David A.B.} and Yoshio Nishi and Saraswat, {Krishna C.}",

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language = "English",

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AU - Nishi, Yoshio

AU - Saraswat, Krishna C.

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AB - We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

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ER -

Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

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