Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si

Hyun Yong Yu, Shen Ren, Masaharu Kobayashi, David A.B. Miller, Yoshio Nishi, Krishna C. Saraswat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the effect of uniaxial strain in Ge p-i-n photodiodes integrated on Si. These tensile and compressive strains effectively result in the absorption spectra shift toward longer(by 74nm/Gpa) and lower(by 87nm/Gpa) wavelength, respectively.

Original languageEnglish
Title of host publication2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09
Pages369-370
Number of pages2
DOIs
Publication statusPublished - 2009
Event2009 IEEE LEOS Annual Meeting Conference, LEOS '09 - Belek-Antalya, Turkey
Duration: 2009 Oct 42009 Oct 8

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
ISSN (Print)1092-8081

Other

Other2009 IEEE LEOS Annual Meeting Conference, LEOS '09
CountryTurkey
CityBelek-Antalya
Period09/10/409/10/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Yu, H. Y., Ren, S., Kobayashi, M., Miller, D. A. B., Nishi, Y., & Saraswat, K. C. (2009). Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si. In 2009 IEEE LEOS Annual Meeting Conference Proceedings, LEOS '09 (pp. 369-370). [5343100] (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS). https://doi.org/10.1109/LEOS.2009.5343100