Effect of UV-assisted RTA on the electrical properties of (Ba,Sr) TiO3 films for low temperature embedding of decoupling capacitor

Kwang Hwan Cho, Min Gyu Kang, Chong Yun Kang, Seok Jin Yoon, Youngpak Lee, Jong Hee Kim, Bong Hee Cho

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Polycrystalline Ba0.4 Sr0.6 TiO3 (BST) thin films grown at 350°C with UV-assisted rapidly thermal annealing (RTA) showed a high- k value of 183 at 100 kHz. The 100 nm thick BST film with UV-assisted RTA exhibited a high capacitance density of 16.2 fF/μ m 2 and a low dissipation factor of 0.48% at 100 kHz with a low leakage current density of 1× 10-8 A/ cm2 at 0.5 MV/cm. The quadratic and linear voltage coefficients of capacitances of the BST film with UV-assisted RTA were -155 ppm/ V2 and 231 ppm/V, respectively. All these make the BST decoupling capacitor very suitable for use in radio-frequency circuits and mixed-signal integrated circuits.

Original languageEnglish
Pages (from-to)G230-G232
JournalJournal of the Electrochemical Society
Volume156
Issue number12
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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